NDLI: Size and density control of MOCVD grown self-organised GaSb islands on GaAs

Content Provider	IEEE Xplore Digital Library
Author	Motlan Goldys, E.M. Drozdowicz-Tomsia, K. Tansley, T.L.
Copyright Year	1998
Description	Author affiliation: Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia (Motlan)
Abstract	We examine the morphology of ultrathin GaSb layers grown by atmospheric pressure chemical vapour deposition on GaAs substrates. Atomic force microscopy is used as a primary characterisation tool. Growth experiments are carried out with V/III ratio and temperature optimised for growth of high quality GaSb. The effects of dilution rates of metalorganic precursors in hydrogen, and pulse growth durations are investigated as a means of controlling growth rate. Dilution rates used are up to forty times higher than those used for standard bulk growth, to enable longer and better controlled island growth. We have found the critical control parameters to be the dilution rate/deposition time ratio and the product of the same quantities. Minimum dimensions reproducibly obtained are about 100/spl times/80 nm at an island thickness of 5 nm, with densities controllable between 1 to 10/spl times/10/sup 13/ m/sup -2/. We relate these findings to the present theories of self-organised island growth and mention their relevance to composite structures for electronic and optoelectronic applications.
Starting Page	460
Ending Page	463
File Size	413520
Page Count	4
File Format	PDF
ISBN	0780345134
DOI	10.1109/COMMAD.1998.791689
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-12-14
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Size control MOCVD Atomic force microscopy Morphology Chemical vapor deposition Gallium arsenide Atomic layer deposition Temperature Hydrogen Thickness control
Content Type	Text
Resource Type	Article

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