NDLI: High quality InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells

Content Provider	IEEE Xplore Digital Library
Author	Shi, W. Zhang, D.H. Zheng, H.Q. Yoon, S.F. Kam, C.H.
Copyright Year	1998
Description	Author affiliation: Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore (Shi, W.)
Abstract	InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/ shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f/sub As//(f/sub As/+f/sub p/). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities.
Starting Page	340
Ending Page	343
File Size	395896
Page Count	4
File Format	PDF
ISBN	0780345134
DOI	10.1109/COMMAD.1998.791657
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-12-14
Publisher Place	Australia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Solids Molecular beam epitaxial growth Valves Temperature Polynomials Hall effect Rough surfaces Surface roughness Organic materials Impurities
Content Type	Text
Resource Type	Article

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