NDLI: A reexamination of silicon avalanche photodiode gain and quantum efficiency

Content Provider	IEEE Xplore Digital Library
Author	McClish, M. Farrell, R. Vanderpuye, K. Shah, K.S.
Copyright Year	2005
Description	Author affiliation: Radiat. Monitoring Devices Inc., Watertown, MA (McClish, M.; Farrell, R.; Vanderpuye, K.; Shah, K.S.)
Abstract	Traditionally the measured gain of an avalanche photodiode (APD) has been considered the product of two parameters: the multiplication process and quantum efficiency (QE), the former being wavelength dependent and the latter being bias independent. We propose a new examination of these related parameters where the APD gain is considered intrinsic, defined as being the amount of electron multiplication each photoelectron undergoes based on the applied bias, and independent of the incident photon wavelength, and the QE being considered intrinsic as a function of only wavelength and bias. This is a more logical, and physically real, perspective of APD behavior. We introduce a technique to measure the intrinsic gain and the intrinsic QE of a deep diffused silicon APD. The mechanisms by which the gain and QE vary as a function of wavelength involve charge collection and light absorption due to the light penetration depth dependency on wavelength. Once the intrinsic gain vs. bias of the APD is measured, it becomes possible to use this measurement as an absolute parameter. With the intrinsic gain known, we show how the intrinsic QE of an APD, for a given wavelength, changes as a function of bias. We also show that when the APD is operated from the low to high gain regime, light at 400 nm to 800 nm experiences an increase in QE, while light at longer wavelengths experiences a reduction in QE. These fundamental, dynamic and operational properties of APDs are critical when considering the wavelength(s) that are of interest for a given application
Starting Page	2959
Ending Page	2962
File Size	256291
Page Count	4
File Format	PDF
ISBN	0780392213
ISSN	10957863
DOI	10.1109/NSSMIC.2005.1596952
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-10-23
Publisher Place	Puerto Rico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Avalanche photodiodes Wavelength measurement Extraterrestrial measurements Radiative recombination Spontaneous emission Photonic band gap P-n junctions Gain measurement Radiation detectors
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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