NDLI: Characterizing drain current dispersion in GaN HEMTs with a new trap model

Content Provider	IEEE Xplore Digital Library
Author	Albahrani, S.A. Rathmell, J.G. Parker, A.E.
Copyright Year	2009
Description	Author affiliation: School of Electrical Engineering, The University of Sydney, NSW Australia 2006 (Rathmell, J.G.) \|\| Dept. of Physics and Engineering, Macquarie University, Sydney NSW Australia 2109 (Albahrani, S.A.; Parker, A.E.)
Abstract	Dispersion in a GaN HEMT, including gate and drain lag, is related to a new trapping model based on SRH theory. The model is used to explain the bias- and terminal-potential dependency of the turn-on transients and their time constants. Because the time constants are extremely long they impact the measurement of true dc characteristics and contribute to knee walk-out. Temperature as a function of time is shown to be a vital consideration. The models of both drain current and trapping need to consider temperature and power dissipation versus time. The relationship between trap potentials and terminal potentials is investigated.
Starting Page	1692
Ending Page	1695
File Size	261555
Page Count	4
File Format	PDF
ISBN	9781424447480
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-29
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	EUMA
Subject Keyword	Gallium nitride HEMTs MODFETs Current measurement Time measurement Dispersion Knee Temperature Pulse measurements Microwave theory and techniques
Content Type	Text
Resource Type	Article

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Characterizing drain current dispersion in GaN HEMTs with a new trap model