NDLI: A load-pull based device evaluation method for bias modulated applications

Content Provider	IEEE Xplore Digital Library
Author	Bengtsson, O. Vestling, L. Olsson, J.
Copyright Year	2009
Description	Author affiliation: Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchoff-Str. 4. D-12489 Berlin, Germany (Bengtsson, O.) \|\| Uppsala University, The Ångström Laboratory, Solid State Electronics, P.O. Box 534, Uppsala, SE-751 21, Sweden (Vestling, L.; Olsson, J.)
Abstract	In this paper an evaluation method for RF-Power transistors for high-efficiency applications using drain bias-modulation is presented. The method is based on post processing of continuous wave load-pull data under varying power, drain bias and impedance matching. Using this method technology limitation can be investigated and the impact of various modulator models on device performance can be predicted at an early stage in the design process. The proposed method shows a possible 10 % efficiency enhancement at 2.14 GHz in mid-level power regions for the studied LDMOS device under drain bias modulation predicted from a maximum efficiency modulator model. The post-processing method is based on spline interpolation and is useful for the study of any varying envelope signal including digital modulated signals with high peak-to-average ratios.
Starting Page	1461
Ending Page	1464
File Size	251440
Page Count	4
File Format	PDF
ISBN	9781424447480
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-09-29
Publisher Place	Italy
Access Restriction	Subscribed
Rights Holder	EUMA
Subject Keyword	Radio frequency Computational modeling Distortion measurement Microwave devices Impedance matching Predictive models Process design Power system modeling Switches Broadband amplifiers
Content Type	Text
Resource Type	Article

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