NDLI: Antimony-based quaternary alloys for high-speed low-power electronic devices

Content Provider	IEEE Xplore Digital Library
Author	Magno, R. Bennett, B.R. Ikossi, K. Ancona, M.G. Glaser, E.R. Papanicolaou, N. Boos, J.B. Shanabrook, B.V. Gutierrez, A.
Copyright Year	2002
Description	Author affiliation: Naval Res. Lab., Washington, DC, USA (Magno, R.; Bennett, B.R.; Ikossi, K.; Ancona, M.G.; Glaser, E.R.; Papanicolaou, N.; Boos, J.B.; Shanabrook, B.V.)
Abstract	Heterojunction bipolar transistors using In/sub z/Ga/sub 1-z/Sb for the base and In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ alloys for the collector and emitter have been explored. Modeling of the DC current-voltage characteristics indicate that current gain in excess of 500 may be obtained. The calculations show that the gain is a function of the base-collector conduction band offset. Molecular beam epitaxy (MBE) procedures for growing suitable alloys with a 6.2 /spl Aring/ lattice constant are under development. Double crystal X-ray diffraction, photoluminescence, Hall effect, and atomic force microscopy have been used to determine the quality of the materials grown. To minimize stress-induced defects, the In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ alloys were grown on undoped GaSb substrates with an AlSb buffer layer. The photoluminescence data indicate that good quality In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ (x=0.52 and y=0.3) with a band gap near 1 eV, is obtained using growth temperatures between 350 and 400/spl deg/C. Superior surface morphology is also found for growths in this temperature range. Te has been used to dope In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ n-type in the 10/sup 17/ cm/sup -3/ range. Good diode characteristics with an ideality factor of 1.1 have been obtained for In/sub x/Al/sub 1-x/As/sub y/Sb/sub 1-y/ p-n junctions grown using Te for the n-type dopant and Be for the p-type.
Sponsorship	IEEE Electron Devices Soc. IEEE Microwave Theory & Techniques Soc. Office of Naval Res. Air Force Office of Sci. Res. Aixtron Corp
Starting Page	288
Ending Page	296
File Size	587364
Page Count	9
File Format	PDF
ISBN	0780374789
DOI	10.1109/LECHPD.2002.1146766
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low power electronics Aluminum alloys Tin alloys Molecular beam epitaxial growth Photoluminescence Atomic force microscopy Tellurium Heterojunction bipolar transistors Gallium alloys Semiconductor process modeling
Content Type	Text
Resource Type	Article

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