NDLI: Ohmic contact technology in III-V nitrides using polarization effects in cap layers

Content Provider	IEEE Xplore Digital Library
Author	Gessmann, T. Graff, J.W. Li, Y.-L. Waldron, E.L. Schubert, E.F.
Copyright Year	2002
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA (Gessmann, T.; Graff, J.W.; Li, Y.-L.; Waldron, E.L.)
Abstract	A novel technology for low-resistance ohmic contacts to III-V nitrides is presented. The contacts employ polarization-induced electric fields in strained cap layers grown on lattice-mismatched III-V nitride buffer layers. With appropriate choice of the cap layer, the electric field in the cap layer reduces the thickness of the tunnel barrier at the metal contact/semiconductor interface. Design rules for polarization-enhanced contacts are presented giving guidance for composition and thickness of the cap layer for different III-V nitride buffer layers. Experimental results for ohmic contacts with p-type InGaN and GaN cap layers are markedly different from samples without a polarized cap layer thus confirming the effectiveness of polarization-enhanced ohmic contacts.
Sponsorship	IEEE Electron Devices Soc. IEEE Microwave Theory & Techniques Soc. Office of Naval Res. Air Force Office of Sci. Res. Aixtron Corp
Starting Page	492
Ending Page	501
File Size	500748
Page Count	10
File Format	PDF
ISBN	0780374789
DOI	10.1109/LECHPD.2002.1146792
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ohmic contacts III-V semiconductor materials Buffer layers Optical polarization Piezoelectric polarization Gallium nitride Tunneling Capacitive sensors Lattices Systems engineering and theory
Content Type	Text
Resource Type	Article

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