NDLI: 100 A and 3.1 kV 4H-SiC GTO thyristors

Content Provider	IEEE Xplore Digital Library
Author	Van Campen, S. Ezis, A. Zingaro, J. Storaska, G. Clarke, R.C. Elliott, K. Temple, V. Hits, D. Thompson, M. Roe, K. Hansen, T.
Copyright Year	2002
Description	Author affiliation: Northrop Grumman, Baltimore, MD, USA (Van Campen, S.; Ezis, A.; Zingaro, J.; Storaska, G.; Clarke, R.C.; Elliott, K.)
Abstract	In this paper, we report on asymmetric SiC GTOs (gate turn-off thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm/spl times/1 mm GTOs connected in parallel has demonstrated 100 A of switching current capability. This is the highest current reported to date with GTOs designed for greater than 3 kV forward blocking voltage. GTOs fabricated from the same wafer have achieved a forward blocking voltage of 3.1 kV, which was the testing limit of the instrumentation. This represents a record high breakdown voltage for GTOs with a drift layer thickness of 30 /spl mu/m. These GTOs also demonstrated record low leakage currents of <5 /spl mu/A at the forward blocking voltage of 3.1 kV.
Sponsorship	IEEE Electron Devices Soc. IEEE Microwave Theory & Techniques Soc. Office of Naval Res. Air Force Office of Sci. Res. Aixtron Corp
Starting Page	58
Ending Page	64
File Size	416912
Page Count	7
File Format	PDF
ISBN	0780374789
DOI	10.1109/LECHPD.2002.1146732
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thyristors Silicon carbide Voltage Substrates Doping Electric breakdown Thermal conductivity Temperature Current density Fabrication
Content Type	Text
Resource Type	Article

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