NDLI: An Ebers-Moll model for heterostructure bipolar transistors with tunnel junctions

Content Provider	IEEE Xplore Digital Library
Author	Lopez-Gonzalez, J.M. Keogh, D.M. Asbeck, P.M.
Copyright Year	2002
Description	Author affiliation: Dept. d'Enginyeria Elettronica, Univ. Politecnica de Catalunya, Barcelona, Spain (Lopez-Gonzalez, J.M.)
Abstract	This paper presents an Ebers-Moll model for HBTs and DHBTs in which tunnelling transport plays an important role at the base-emitter (BE) and/or base-collector (BC) junction. Devices of this type include GaAs or InP-based HBTs with abrupt heterojunctions, as well as a number of devices designed intentionally with thin tunnel layers at the B-E or B-C junctions. For these structures, the conventional drift-diffusion formalisms (and numerical simulators based on them) are inadequate. The present model allows a quasi-analytical description of the device characteristics, assuming one dimensional structure. The model is applied here to the study of tunnel emitter and tunnel collector InGaP-HBTs. Forward and reverse Gummel plots can be analysed in relation to the tunnelling characteristics of the junction barriers.
Sponsorship	IEEE Electron Devices Soc. IEEE Microwave Theory & Techniques Soc. Office of Naval Res. Air Force Office of Sci. Res. Aixtron Corp
Starting Page	240
Ending Page	244
File Size	198274
Page Count	5
File Format	PDF
ISBN	0780374789
DOI	10.1109/LECHPD.2002.1146757
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-08-08
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Bipolar transistors Tunneling Electronic mail Double heterojunction bipolar transistors Gallium arsenide Numerical simulation Topology Software tools Charge carrier processes Electron emission
Content Type	Text
Resource Type	Article

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