NDLI: Atomic layer deposition (ALD) tungsten nano-electromechanical transistors

Content Provider	IEEE Xplore Digital Library
Author	Davidson, B.D. George, S.M. Bright, V.M.
Copyright Year	2010
Description	Author affiliation: Departments of Chemical and Biological Engineering and Chemistry, University of Colorado, Boulder, USA (George, S.M.) \|\| Department of Mechanical Engineering, USA (Davidson, B.D.; Bright, V.M.)
Abstract	In this paper a relatively simple, CMOS compatible, top-down nano-fabrication process used in the fabrication of 3-terminal NEMS switches is introduced. The process is low-temperature, using atomic layer deposition tungsten (WALD) deposited at 120 °C as the structural material. In addition, the unique use of electron beam lithography in conjunction with reactive ion etching (RIE) and lift-off techniques enable simple and reliable fabrication of n-terminal devices with up to n-different terminal/source gap heights. With this process, novel 3-terminal WALD NEMS switches analogous to NMOS transistors have been successfully fabricated, and switching behavior characterized. The devices are easily reproducible from chip-to-chip, have a much higher yield when compared to similar devices fabricated by bottom-up or top-down processes, and have demonstrated actuation voltages that are superior to thin-film (TF) or carbon nano-tube (CNT) based switches.
Starting Page	424
Ending Page	427
File Size	3285217
Page Count	4
File Format	PDF
ISBN	9781424457618
ISSN	10846999
e-ISBN	9781424457649
e-ISBN	9781424457632
DOI	10.1109/MEMSYS.2010.5442474
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-01-24
Publisher Place	Hong Kong, China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Atomic layer deposition Tungsten Fabrication Nanoelectromechanical systems Switches CMOS process Electron beams Lithography Etching MOSFETs
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering

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