NDLI: Influence of the novel anchor design on the shear strength of poly-sige thin film wafer level packages

Content Provider	IEEE Xplore Digital Library
Author	Claes, G. Severi, S. Van Hoof, R. Decoutere, S. Celis, J.-P. Witvrouw, A.
Copyright Year	2010
Description	Author affiliation: KULeuven, Belgium (Celis, J.-P.) \|\| IMEC, Leuven, Belgium (Claes, G.; Severi, S.; Van Hoof, R.; Decoutere, S.; Witvrouw, A.)
Abstract	This paper demonstrates several novel anchor designs for thin film wafer level packaging. Additionally, for the first time, the influence of the anchor design parameters, processing parameters and the choice of the release process on the shear strength of the thin film packages is evaluated. Polycrystalline Silicon-Germanium (poly-SiGe) thin film packages with a sacrificial SiO2 layer are used as test samples. For the majority of the packages the MIL-standard is reached. For the failing packages the cause is identified and understood. Thin film packages with a very small anchor width are strong enough to reach the MIL-standard which leads to smaller packages, less occupied area and thus cost reduction.
Starting Page	512
Ending Page	515
File Size	453318
Page Count	4
File Format	PDF
ISBN	9781424457618
ISSN	10846999
e-ISBN	9781424457649
e-ISBN	9781424457632
DOI	10.1109/MEMSYS.2010.5442452
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-01-24
Publisher Place	Hong Kong, China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transistors Wafer scale integration Testing Biomembranes Germanium silicon alloys Silicon germanium Microelectromechanical devices Plastic films Plastic packaging Process design
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering

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