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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lee, S.H. Geunbae Lim Hyunjung Shin Wonkyu Moon |
| Copyright Year | 2008 |
| Description | Author affiliation: Pohang Univ. of Sci. & Technol., Pohang (Lee, S.H.; Geunbae Lim) |
| Abstract | The V-shaped metal-oxide-semiconductor (MOS) transistor probe is fabricated and evaluated to detect the surface electric properties. The V-shaped structure is selected for the better lateral stiffness compared with the simple rectangular structure and the specific dimensions are determined using the parallel beam approximation (PBA). The conductive nano tip is grown with the focused-ion-beam (FIB) system, which delivers the electric properties from the sample surface to the MOS transistor. Since the MOS transistor has the high working frequency and the high sensitivity, the device can detect the small electric properties with the high speed. The fabricated device is applied to the various test patterns like the metal lines and PZT poling regions. The results represent the well defined measurement patterns and show the promising aspect of the surface electric property detection with high sensitivity and high working frequency. |
| Starting Page | 351 |
| Ending Page | 354 |
| File Size | 575243 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424417926 |
| ISSN | 10846999 |
| DOI | 10.1109/MEMSYS.2008.4443665 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-01-13 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fabrication MOSFETs Probes Frequency Equations Electric variables measurement Electrostatic measurements Force measurement Ferroelectric materials Springs |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Mechanical Engineering Electrical and Electronic Engineering |
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