NDLI: Epitaxial growth and magnetic characterization of γ'-Fe4N thin films

Content Provider	IEEE Xplore Digital Library
Author	Atiq, S. Siddiqi, S.A. Ko, H.S. Riaz, S. Naseem, S. Shin, S.C.
Copyright Year	2015
Description	Author affiliation: Centre of Excellence in Solid-State Phys., Univ. of the Punjab, Lahore, Pakistan (Atiq, S.; Riaz, S.; Naseem, S.) \|\| Interdiscipl. Res. Centre for Biomed. Mater. (IRCBM), COMSATS Inst. of Inf. Technol., Lahore, Pakistan (Siddiqi, S.A.) \|\| Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea (Ko, H.S.; Shin, S.C.)
Abstract	Owing to their giant value of magnetic moment under specific conditions, certain phases of iron nitride have received considerable attention of the scientific community worldwide. In particular, $α”-Fe_{16}N_{2}$ and $γ'-Fe_{4}N$ phases have been studied extensively due to their excellent ferromagnetic characteristics. The former being thermally less stable so $γ'-Fe_{4}N$ appears as strong candidate for applications where high saturation magnetization $(M_{s}),$ low coercivity $(H_{c})$ and better chemical stability is required . For instance, all nitride magnetic tunnel junctions (MTJs) using $Cu_{3}N$ as insulating layer between $γ'-Fe_{4}N$ electrodes and current perpendicular-to-plane (CPP) devices could greatly benefit from these materials. However, high value of magnetic moment in these types of materials could only be achieved in epitaxial thin films. In this context, we optimized the conditions for epitaxial growth of $γ'-Fe_{4}N$ thin films by controlling the deposition temperature and post annealing time. 55 nm thick films were directly deposited on single crystal MgO(100) substrate using dc magnetron sputtering at a base pressure better than 2 x $10^{-6}$ Torr . A mixture of pure Ar and N at a ratio of 10:1 was injected into the chamber at 5 .5 mTorr . 2” diameter thick target of highly pure α-Fe was sputtered at 30 W . The substrate temperature was varied from 200 to 500 °C and the films were in-situ annealed from 10 to 40 min .
Starting Page	1
Ending Page	1
File Size	371416
Page Count	1
File Format	PDF
e-ISBN	9781479973224
DOI	10.1109/INTMAG.2015.7157711
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-11
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Substrates Epitaxial growth X-ray scattering Magnetic tunneling Saturation magnetization
Content Type	Text
Resource Type	Article

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