NDLI: Nanoconstriction-based spin-Hall oscillators

Content Provider	IEEE Xplore Digital Library
Author	Demidov, V.E. Urazhdin, S. Zholud, A. Sadovnikov, A. Demokritov, S.O.
Copyright Year	2015
Description	Author affiliation: Saratov State Univ., Saratov, Russia (Sadovnikov, A.) \|\| Inst. for Appl. Phys., Univ. of Muenster, Muenster, Germany (Demidov, V.E.; Demokritov, S.O.) \|\| Emory Univ., Atlanta, GA, USA (Urazhdin, S.; Zholud, A.)
Abstract	Recent observations of coherent microwave magnetization oscillations driven by pure spin current have provided novel opportunities for the development of active spintronic devices. It was demonstrated that pure spin current produced by the spin-Hall effect (SHE) can be utilized to implement magnetic nano-oscillators that do not require electrical current flows through the active magnetic layer, allowing one to avoid detrimental effects associated with large densities of the electric current in the magnetic layer typical for the traditional spin-transfer torque (STT) spintronic devices. The previously demonstrated spin-Hall nano-oscillators (SHNO) were found to exhibit a relatively large power and small auto-oscillation linewidth at cryogenic temperatures. However, both of these characteristics significantly degrade at increased temperatures. This drawback can be avoided if a single dynamical mode with a significant spatial extent can be selectively excited in an SHNO. One can expect that the auto-oscillation area should depend on the spin injection geometry. However, in practice local injection of spin current leads to the spontaneous formation of the so-called “bullet” auto-oscillation mode, whose spatial dimensions are determined by the nonlinear self-localization effects rather than the spin-current injection area. Here, we demonstrate SHNOs characterized by efficient room-temperature generation of coherent microwave signals, achieved by controlling the auto-oscillation characteristics using magnetic dipolar effects instead of the self-localization.
Starting Page	1
Ending Page	1
File Size	239754
Page Count	1
File Format	PDF
e-ISBN	9781479973224
DOI	10.1109/INTMAG.2015.7157174
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-05-11
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Microwave devices Microwave oscillators Microwave FET integrated circuits Microwave integrated circuits Nanoscale devices Magnetization
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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