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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lukaszek, W. Daryanani, S. Shields, J. |
| Copyright Year | 2002 |
| Abstract | Charging characteristics of $As^{+}$ and $BF_{2}^{+}$ high-current ion implants were measured using bare and resist-covered CHARM®-2 wafers patterned with a six-field mask containing holes ranging from 2 μm to 0.5 μm (as well as clear and resist-covered fields). The results show surprising differences in the charging characteristics of high-current ion implanters compared to contemporary plasma-based process tools. In plasma tools, the electron-shading"" effects increase positive (and decrease negative) potentials and current densities as hole size decreases. On the contrary, high-current ion implants exhibited positive and negative potentials independent of hole size. The positive and negative current densities were also independent of hole size (but significantly higher than in the clear field). These results indicate that charging damage in high-current ion implanters should not increase when implant mask features are scaled down (other factors being equal). We also explain the apparent absence of damage in contemporary high-current ion implanters in spite of the very high positive current densities and high positive potentials. |
| Sponsorship | IEEE Circuits & Syst. Soc |
| Starting Page | 209 |
| Ending Page | 212 |
| File Size | 1830790 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780371550 |
| DOI | 10.1109/IIT.2002.1257975 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-09-22 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Implants Resists Current density Plasma measurements Floods Plasma properties Plasma density Plasma devices Voltage Marine technology |
| Content Type | Text |
| Resource Type | Article |
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