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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zechner, C. Erlebach, A. Terterian, A. Scholze, A. Johnson, M. |
| Copyright Year | 2002 |
| Abstract | After implantation, the distribution of ions can be described by analytical functions with parameters depending on implantation conditions. In this work, a calibrated Monte Carlo simulator was used to calculate tables for the implantation of B, $BF_{2},$ P, As, In and Sb. Starting from systematic Monte Carlo data we extracted the parameters of two Pearson functions for dopant profiles in crystalline silicon and single Pearson functions for profiles in $SiO_{2},$ $Si_{3}N_{4}$ and poly-silicon. The new tables cover more dopant species and implantation conditions than existing implantation tables and provide excellent agreement with 90 SIMS profiles. In a 2D nMOS test case, the implantation simulation with the new tables provides the same accuracy as Monte Carlo simulations. |
| Sponsorship | IEEE Circuits & Syst. Soc |
| Starting Page | 567 |
| Ending Page | 570 |
| File Size | 305439 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780371550 |
| DOI | 10.1109/IIT.2002.1258068 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2002-09-22 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Crystallization Silicon Monte Carlo methods Table lookup Calibration Energy loss Computational modeling Data mining MOS devices Testing |
| Content Type | Text |
| Resource Type | Article |
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