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Content Provider | IEEE Xplore Digital Library |
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Author | Sato, M. Maruyama, M. Sakanishi, H. Isobe, E. Yoshida, K. Nishihara, T. Ochi, T. Inada, K. Murata, H. Brailove, A. Tanaka, T. |
Copyright Year | 2002 |
Abstract | The next generation of the ORion flat panel ion doping system has been developed in order to meet evolving industry requirements for implantation into substrates that now exceed one square meter in area. The ORion II ion doping system scales-up both the linear ribbon-beam ion source, and the high-throughput substrate handling architecture of the first-generation ORion machine. The ORion II is capable of processing of substrates up to 1000Ø1200 mm, and can deliver linear beam current densities of 700 particle μA/cm of phosphorous and 300 particle μA/cm of boron. In addition to describing the machine architecture, we present data on the beam current uniformity, implant It,, throughput, beam current dynamic range and process-switching performance. |
Sponsorship | IEEE Circuits & Syst. Soc |
Starting Page | 383 |
Ending Page | 386 |
File Size | 1416561 |
Page Count | 4 |
File Format | |
ISBN | 0780371550 |
DOI | 10.1109/IIT.2002.1258020 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2002-09-22 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Doping Substrates Ion sources Ion beams Throughput Thin film transistors Manufacturing Toy industry Particle beams Current density |
Content Type | Text |
Resource Type | Article |
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