NDLI: Plasma-induced charging damage in ultrathin (3 nm) nitrided oxides

Content Provider	IEEE Xplore Digital Library
Author	Chen, C.-C. Lin, H.-C. Chang, C.-Y. Liang, M.-S. Chien, C.-H. Hsien, S.-K. Huang, T.-Y.
Copyright Year	1999
Description	Author affiliation: Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan (Chen, C.-C.)
Abstract	Plasma-induced charging damage in various 3 nm-thick gate oxides (i.e. pure oxides and N/sub 2/O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Gate leakage current measurements indicated that large leakage current occurs at both the wafer center and the wafer edge for pMOS devices, while it occurs only at the wafer center for nMOS devices. These interesting observations could be explained by the polarity dependence of ultra-thin oxides in terms of charge-to-breakdown characteristics. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage is significantly suppressed in N/sub 2/O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided-oxide is also found to be more robust when subjected to high temperature stressing.
Starting Page	141
Ending Page	144
File Size	272140
Page Count	4
File Format	PDF
ISBN	0965157733
DOI	10.1109/PPID.1999.798834
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1999-05-09
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	American Vacuum Soc.
Subject Keyword	MOS devices Plasma devices Leakage current Plasma measurements Plasma temperature Resists Antenna measurements Current measurement Plasma properties Robustness
Content Type	Text
Resource Type	Article

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