NDLI: High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE

Content Provider	IEEE Xplore Digital Library
Author	Ghosh, B.K. Saad, I. Yamamoto, A.
Copyright Year	2011
Description	Author affiliation: Dept. of Electrical & Electronics Eng., Fukui University, Bunkyo 3-9-1, Fukui 910-8507, Japan (Yamamoto, A.) \|\| Dept. of Electrical and Electronics Eng., Univeristi Malaysia Sabah, Jalan UMS, 88400 Kota-kinabalu, Sabah, Malaysia (Ghosh, B.K.; Saad, I.)
Abstract	The stress and defect generation; hence luminescence efficiency of semiconductor materials is correlated. Even severe cracks are formed on the epilayer surface due to stress those impair the photoluminescence property of devices. So the stress effect of GaN epilayer grown on Si(111) is evaluated by different growth approaches and different interlayer's. Epilayer on thinner converted SiC templates is found to increases PL Ex. peak energy with broadening its line width whereas epilayer grown on porously converted GaN layer is found comparatively low PL Ex. peak energy with narrowing its line width. From Raman scattering analysis, it is also observed that the PL Ex. peak is not signifies actual stress level rather its reveals epilayer quality. PL Ex. Peak energy is found to increase with increasing thickness of epilayer grown on converted interlayer on Si substrate.
Starting Page	392
Ending Page	395
File Size	236161
Page Count	4
File Format	PDF
ISBN	9781612848440
e-ISBN	9781612848464
DOI	10.1109/RSM.2011.6088368
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-28
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Lattices Silicon Gallium nitride Stress Substrates Strain
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Structure of Interlayer on Si(111) Substrate Effect on GaN Film

Comparative analysis of electrical characteristic AlGaN/GaN HEMT on Si(111) and 4H-SiC for X-band high power application

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

GaN HEMTs on Si substrate with high cutoff frequency

GaN technology for microwave applications

Heteroepitaxy of GaN on Si(111)

High-power GaN/AlGaN Ka-band HEMT's on silicon carbide substrates

Microwave performance of AlGaN/GaN high electron mobility transistors on Si(111) substrates

Improving GaN on Si Power Amplifiers through reduction of parasitic conduction layer

High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE

Similar Documents

Structure of Interlayer on Si(111) Substrate Effect on GaN Film

Comparative analysis of electrical characteristic AlGaN/GaN HEMT on Si(111) and 4H-SiC for X-band high power application

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

GaN HEMTs on Si substrate with high cutoff frequency

GaN technology for microwave applications

Heteroepitaxy of GaN on Si(111)

High-power GaN/AlGaN Ka-band HEMT's on silicon carbide substrates

Microwave performance of AlGaN/GaN high electron mobility transistors on Si(111) substrates

Improving GaN on Si Power Amplifiers through reduction of parasitic conduction layer

High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE