NDLI: GaN HEMT on Si for high power applications

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2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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2011 IEEE Regional Symposium on Micro and Nano Electronics

IEEE-RSM 2011 committee

Message from chair of ED chapter, IEEE Malaysia section (Co-Chair RSM 2011)

Table of contents

Quantum mechanical effects in surface potential based MOS compact models

GaN HEMT on Si for high power applications

Future of nano CMOS technology

2012 Semiconductor outlook and its impact to semiconductor manufacturing in Malaysia

Influence of the gate thickness on the memory behavior of MFIS-FETs

InGaN-based blue LED grown on Si(111) substrate

An analytical model of dark saturation current of silicon solar cell considering both SRH and Auger recombination

Effect of recombination on the base transit time model considering base pushout

TCAD process simulation for light effect improvement of ion sensitive field effect transistor

Influence of post-deposition annealing on metal-organic decomposed lanthanum cerium oxide film

Structural and morphology of zinc sulphide thin films on various temperature

Reverse leakage current mechanisms in quantum dot laser structures

Process and characterization of Strained Silicon MOSFET incorporating Dielectric Pocket (SDP-MOSFET)

Essential corrective factors in TCAD calibration for MOSFET device

Investigation of effects of nanowires numbers in N-channel and P-channel nanowire transistors on nanowire-CMOS characteristics

Temperature dependent current transport in Schottky diodes of nano structured ZnO grown on Si by magnetron sputtering

Vibration analysis of pMUT with polymer adhesion layer

Modelling of a novel design of microfluidic based acoustic sensor

Numerical analysis on ZnxCd1−xS/CdTe solar cells with different buffer layers, front and back contacts

Mechanical design and analysis of innovative integrated circuit test socket

Analyze of input process parameter variation on threshold voltage in 45nm n-channel MOSFET

Modeling of inductive coupling transducer for activation of low wattage electronic implants

Magnetization behavior of soft magnetic materials for sensor applications

Evaluation of TiO2/SiO2 dielectric thin films to overcome the challenges of CMOS scaling

Design of interdigital structured supercapacitor for powering biomedical devices

A new analytical model for lateral breakdown voltage of double-gate power MOSFETs

Design and fabrication of microfluidic transistor on silicon substrate

Investigation on effect of tilt angle ion implantations for vertical double gate MOSFET

Field effect in silicon nanostructure fabricated by Atomic Force Microscopy nano lithography

15 GHz medium power amplifier design for Ku-band applications

A fully integrated CMOS up-conversion mixer with input active balun for wireless applications

Design, simulation and synthesis of wheelchair controller using Fuzzy logic

Low dynamic power integrated circuits design using reliable cell-downsizing methodology

Analog layout design optimization and verification for SoC

A high speed and low power voltage controlled ring oscillator for phase locked loop circuits

Dc-Dc buck and boost converter design issues in recent VLSI platform

Effective parameterization for IP re-use

Cascaded low noise amplifier at 15 GHz for RF — Front end application

A 2.4 GHz packaged power amplifier using GaAs PHEMT technology

Capacitive sensor interfacing circuit using 0.18-nm CMOS technology for MEMS application

Low power CMOS charge sharing dynamic latch comparator using 0.18μm technology

A simple but effective ESD robustness improvement for NMOS transistors used in I/O pads

Design of a 5GHz phase-locked loop

A dual-band LNA with 0.18-μm CMOS switches

CMOS Op amp testing for capacitive measuring systems application

Low power modulator for the application of capsule endoscope

Determination of sensitive inputs of nanoscale digital circuits using Bayesian network analysis

Design of a current comparator for quaternary multi valued Analog to Digital Converter

Improvement in reliability by changing the deterministic inputs of nanoscale circuits

An efficient diagnosis march-based algorithm for coupling faults in SRAM

Hibernating switched current cells for low power 14-bit Digital to Analog Converters

Improvement of Cu-Al bond integrity on low k pad structures

Analysis of material properties for thin film membrane in thermal actuated micropump

Modeling of the reliability baseline for process control monitoring kerf structures

Nanoindentation characterization of Sn-Ag-Sb/Cu substrate IMC Layer subject to thermal aging

Analog matching properties process dependency on MIM capacitors

Throughput improvement in semiconductor fabrication for 0.13μm technology

Failure analysis of a second level electronic package

Metallurgical bond integrity of C45 ultra fine pitch with 18μm copper wire

Molecular single electronics using DNA base Cytosine

Simulation of ionizing radiation induced effects in nanoscale semiconductor material

Polysilicon nanogap capacitive biosensors for the pH detection

Monolayer graphene nanoribbon p-n junction

Current-voltage modeling of Bilayer Graphene Nanoribbon Schottky Diode

The alignment of carbon nano tube between Aluminum electrodes using AC dielectrophoresis method

The characterization study of functionalized multi-wall carbon nanotubes purified by acid oxidation

Effects of CNT density variation in field emission model of ionization gas sensor

Evaluation of TiO2/SiO2 dielectric thin films to overcome the challenges of CMOS scaling

Effects of Mn doping concentrations on properties of ZnO thin films

A study on the performance evaluation of a CNT-OPAMP by variation of SWNTs in the CNFET-channel region

Cobalt silicide and titanium silicide effects on nano devices

Optimizing 35nm NMOS devices VTH and ILEAK by controlling active area and halo implantation dosage

Characterization of carbon nanotube/titanium dioxide acid treatment nanocomposite structure using sol-gel method

Process development on synthesizing zinc oxide nanorods and fabrication of IDT finger electrodes for surface acoustic wave devices

Effect of TiO2 on structural and morphology of La0.67Sr0.33Mn1−xTixO3 (LSMO) system

Analysis of frequency up-conversion based vibration energy harvesting

Analytical modeling of plus shape MEMS paddle bridge resonant sensor for weak magnetic fields

Development of active inductor in CMOS tunable RF Bandpass filter

Design and modelling of an impedance-based MEMS biosensor

Design, modeling and simulation of CMOS MEMS cantilever for carbon dioxide gas sensing

Design and simulation of a MEMS capacitive bending strain sensor using dielectric materials for spinal fusion monitoring

Effect of working fluid, acceleration and heater power on temperature profile inside a thermal convective accelerometer

Quality factor for RF-MEMS capacitive switch on semi-suspended CPW

Process for the determination of thickness of polymeric microchannels for microfluidic applications

Design and simulation of high performance RF MEMS series switch

Finite element analysis of a lateral microelectro-thermal actuator

Characterization of Inter Digital capacitor for water level sensor

Microstructural studies on fire-through front contact metallization of Si solar cells

SOA characterization for AND logic operation on SOA based NOLM

The effect of signal repetition rate, injected current and switching window on cross-phase modulation in SOA-NOLM

Electrical characteristics of silicon-on-insulator (SOI) phase modulator

Impact of coupled resonator geometry on silicon-on insulator wavelength filter characteristics

Optimisation of ion-exchanged channel waveguides for optical manipulation

Fabrication of MEH-PPV based organic light emitting diode and transistor

High luminescence efficient Ga polarity domain GaN realized on Si(111) by MOVPE

Enhancing GaInNAs/GaAs single quantum well emission wavelength by utilizing GaNAs step graded layer

GaN HEMT on Si for high power applications

Content Provider	IEEE Xplore Digital Library
Author	Chang, E.Y.
Copyright Year	2011
Description	Author affiliation: National Chiao Tung University, Taiwan, R.O.C. (Chang, E.Y.)
Abstract	Due to the large bandgap and high electron mobility properties, AlGaN/GaN high electron mobility transistor (HEMT) has become one of the most promising candidates for the future generation of power electronic applications. Besides, AlGaN/GaN HEMT grown on Si substrate not only reduces the production cost but also prepares for the possible combination of GaN devices and Si technology. High quality AlGaN/GaN structure on Si substrate (2∼6 inches) has been grown by using metal-organic chemical vapour deposition (MOCVD, Veeco D-180 System). From the Hall effect measurements, sheet resistance of 344 ohm/sq, sheet carrier density of $1×10^{13}$ $cm^{−2}$ and electron mobility of 1800 cm/V-s are achieved. The HEMT devices are fabricated by using in-house facilities for both high frequency and high power applications. For HEMT device grown on a relatively thinner GaN buffer (1.2μm) with source-drain spacing of 7μm and gate length of 1μm, the device saturated current (Idss) and peak tranconductance (Gm) are 877mA/mm and 120 mS/mm, respectively. For this device, the breakdown voltage is larger than 150V. On the other hand, when a much thicker GaN buffer (5μm) is used, breakdown voltage over 400V is demonstrated. The results indicate that thicker buffer is needed to improve the GaN crystal quality and device endurance for high electrical field. In order to increase the output current, large periphery HEMT devices are also fabricated. The DC characteristics of a 20 mm device with field plate structure show that a total output current of 20A is achieved for AlGaN/GaN HEMT grown on Si. Furthermore, for high frequency applications, device with smaller gate length (0.7 μm) is also fabricated. In such device, a power density of 5 W/mm with 26.2% power added efficiency (PAE) has been measured at 8 GHz and biased at 30V
File Size	914289
File Format	PDF
ISBN	9781612848440
e-ISBN	9781612848464
DOI	10.1109/RSM.2011.6088275
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-09-28
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Density measurement HEMTs Logic gates Electron mobility Silicon Gallium nitride Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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