NDLI: A 3D-Integration method to compensate output voltage degradation of boost converter for compact Solid-State-Drives

Content Provider	IEEE Xplore Digital Library
Author	Hatanaka, T. Johguchi, K. Takeuchi, K.
Copyright Year	2011
Description	Author affiliation: University of Tokyo, Department of Electrical Engineering and Information Systems, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan (Hatanaka, T.; Johguchi, K.; Takeuchi, K.)
Abstract	This paper demonstrates the program-voltage (20 V) booster operations with stacked Si-chips for 3D-integrated Solid-State-Drives. The magnetic field radiated by the switching current of the boost converter induces the eddy current in the conductor. The eddy current graduates the boost converter performance due to the lowered inductance of the coil. The effects on the performance of the boost converter as a function of the distance from the coil to conductor are investigated. The 3D-SSD requires the > 0.84 mm space between the coil and the conductor to generate the program-voltage of 20 V. By inserting NAND flash memory chips between the coil and the conductor, the 3D-SSD can be successfully realized without the output voltage degradation.
Starting Page	1
Ending Page	4
File Size	383989
Page Count	4
File Format	PDF
ISBN	9781467321891
e-ISBN	9781467321907
DOI	10.1109/3DIC.2012.6263023
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-01-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Coils Semiconductor device measurement Magnetic field measurement Current measurement Flash memory Conductors Magnetic fields
Content Type	Text
Resource Type	Article

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