NDLI: Study on high performance and productivity of TSV's with new filling method and alloy for advanced 3D-SiP

Content Provider	IEEE Xplore Digital Library
Author	Sato, R. Tsukada, A. Sato, Y. Iwata, Y. Murata, H. Sekine, S. Kimura, R. Kishi, K.
Copyright Year	2011
Description	Author affiliation: Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita Osaka, 565-0871, Japan (Sato, R.; Tsukada, A.; Sato, Y.; Iwata, Y.; Murata, H.) \|\| Napura Co., Ltd, Japan, 2-19-9 higashitateishi, Katsushika Tokyo, 124-0022, Japan (Sekine, S.; Kimura, R.; Kishi, K.)
Abstract	We focus on 3D-SiP using TSV's as one possible breakthrough method that can overcome semiconductor scaling limits. Despite numerous investigations, this method has not reached mass production due to many problems in processing, structure, mass production, reliability, etc… In particular, typical filling methods used in the current TSV such as Cu electro-plating, W-CVD and the like have poor manufacturability and are limited to holes with small aspect ratios making practical adoption problematic. To overcome this obstacle, we have developed a new Bi-Sn liquid metal filling method that is completely different from previous methods. In this method, we first form a high aspect ratio, miniature via using RIE dry etching on a Si wafer. Filling is performed by melting alloy in a vacuum, and removing the melted alloy residue with pressurization. For this purpose, we have developed a new Bi-Sn-Ag filler material that expands when solidifying, and can withstand temperatures >250C. Our landmark method makes it possible to increase the speed of filling a TSV by several minutes for a 12 inch wafer, as well as make it possible to fill a TSV with super high aspect ratio(>40), super fine via(about 0.2μm) and no Keep Out Zone (KOZ) using this material.
Starting Page	1
Ending Page	4
File Size	585350
Page Count	4
File Format	PDF
ISBN	9781467321891
e-ISBN	9781467321907
DOI	10.1109/3DIC.2012.6262946
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-01-31
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Productivity Liquids Metals Filling Through-silicon vias Stress
Content Type	Text
Resource Type	Article

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