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Content Provider | IEEE Xplore Digital Library |
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Author | Zhu, Ze Sun, Huayu Chan, Yan-cheong Wu, Fengshun |
Copyright Year | 2015 |
Description | Author affiliation: Huazhong University of Science and Technology, Wuhan, China (Wu, Fengshun) || City University of Hong Kong, Hong Kong, China (Zhu, Ze; Sun, Huayu; Chan, Yan-cheong) |
Abstract | Electromigration problem under current stressing has challenged the reliability of electronic products for a long time, which is more serious as the current applied is increasing. Adding nanoparticles have been proved to be effective in improving the mechanical and electrical properties of solder joints. This work studied the impact of Ag element on electromigration behavior of SnCu0.7 solder joints. SnCu0.7Ag0.3 solder is made by element alloying, while SnCu0.7+0.3Ag solder is made by doping Ag nanoparticles into SnCu0.7 solder paste. It is found that Ag3Sn in Ag incorporated solder joints helps lower the dissolution rate of Cu-Ni-Sn IMCs at cathode by impeding Cu diffusion in bulk solder. The rate of void formation and growth at cathode is remarkably inhibited. Compared to SnCu0.7+0.3Ag solder, SnCu0.7Ag0.3 solder has smaller-sized Ag3Sn IMCs particles, and be more effective in lowering the depletion rate of cathode IMCs. Through this study, we compared the performance of element alloying and nano-doping, and concluded that element alloying is more effective than nano-doping in improving solder joints' electromigration resistance under the same composition. |
Starting Page | 1 |
Ending Page | 5 |
File Size | 1195852 |
Page Count | 5 |
File Format | |
e-ISBN | 9781467372695 |
DOI | 10.1109/EPTC.2015.7412350 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2015-12-02 |
Publisher Place | Singapore |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Soldering Cathodes Current density Microstructure Electromigration Nanoparticles Alloying void electromigration reliability nano-doping SnCu0.7 |
Content Type | Text |
Resource Type | Article |
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