NDLI: Investigation of 3-pass laser grooving process development for low-k devices

Content Provider	IEEE Xplore Digital Library
Author	Liu, Haiyan Wang, J. H. Xu, Sean
Copyright Year	2015
Description	Author affiliation: Freescale Semiconductor (China) Limited., No.15 Xinghua Avenue, Xiqing Economic Development Area Tianjin, China 300385 (Liu, Haiyan; Wang, J. H; Xu, Sean)
Abstract	The low-k dielectric materials in wafer fabrication are widely used. The current advanced mechanical dicing is not able to meet the requirement of low-k technology, since the low-k materials are harder and brittle. Laser dicing is developed for low-k wafer dicing. There are various laser dicing techniques in the market. Depending on the wafer thickness, laser dicing can either be a though cut or a partial cut process, which is commonly known as laser grooving. In this paper, the study work mainly focus on laser grooving and mechanical dicing process for Low-k wafer. The laser grooving used in this study is a 3-pass laser beam, and the laser grooving process setup is discussed. High power optical microscope, SEM, FIB and IR were the inspection tools used in this study. After laser grooving, the characterize of laser grooving, including the die edge quality, grooving geometry, die strength, mechanical dicing and reliability results are all investigated. The die was packaged into a 19×19mm 529IO MAPBGA package. Post assembly, CSAM and electrical test were performed on the assembled parts at T0, post MSL3/260degree C, post 264h UHST (110°C/85%RH), and post TC500cycles (−55°C to 125°C). With optimized parameter, a good dicing quality was get, without metal burr, metal remaining, micro cracks on side wall etc. The packaged sample had passed all stress. No laser grooving and mechanical dicing defect related fail. It is concluded that the 3-pass laser grooving is a good solution for low-k wafer dicing.
Starting Page	1
Ending Page	4
File Size	1273825
Page Count	4
File Format	PDF
e-ISBN	9781467372695
DOI	10.1109/EPTC.2015.7412424
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-12-02
Publisher Place	Singapore
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Metals Blades Laser beams Coatings Silicon Surface treatment Shape
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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