NDLI: High temperature storage performance for Au Sn diffusion soldering on Cu leadframe substrate

Content Provider	IEEE Xplore Digital Library
Author	Abdullah, Z. Abdul Rahman, M.
Copyright Year	2010
Description	Author affiliation: Infineon Technologies (M) Sdn Bhd, Free Trade Zone, 75350, Melaka Malaysia (Abdullah, Z.; Abdul Rahman, M.)
Abstract	It has been reported that the microstructure of the Au20Sn solder was strongly affected by the dissolution of Cu in the reflow $process^{1}.$ From this findings a study had been conducted but this time using a four layer stacked back side metallization using Au25Sn on Cu leadframe substrate on the effect of the inter metallic compound after long stoppages until 10 mins at die bonding tunnel with complete supply of 85%N215%H2 extended up to 2000hrs of High Temperature Storage at 175 °C. The layer stacked was using ametal stack of Al400nm/Ti400nm/andNiV75nm/75Au25Sn 1200nm, the samples were then die bonded at 360° C using TO 263 LPL selective NiNiP leadframe
Starting Page	1
Ending Page	4
File Size	449975
Page Count	4
File Format	PDF
ISBN	9781424488254
ISSN	10898190
e-ISBN	9781424488278
DOI	10.1109/IEMT.2010.5746718
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-30
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Tin Gold Lead Silicon Soldering Microassembly Eutectic Temperature Diffusion Soldering Solder Void Isothermal solidification
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering

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Effect of stress on interfacial intermetallic compound development of Sn-Ag-Cu lead-free solder joint on Au/Ni/Cu substrate

Effect of 3 wt.% Bi in Sn-Zn solder on the interfacial reactions with the Au/Ni metallization

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