NDLI: Improved corner rounding method for trenched MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Ng Hong Seng
Copyright Year	2010
Description	Author affiliation: X-FAB Sarawak Sdn. Bhd., 1 Silicon Drive, Sama Jaya Free Industrial Zone, 93350 Kuching, Sarawak, Malaysia (Ng Hong Seng)
Abstract	This paper suggests an improved method to round off the concave corners of the deep trenches formed by plasma etch. The corner rounding technique, sacrificial oxidation (SACOX) before gate oxidation, has been practiced on the shallow trench isolation (STI) to improve the CMOS leakage performance. However, the direct implementation of the SACOX on the deep trenched MOSFET having less than 0.5 um trench width is insufficient to eliminate the oxide thinning at the concave corners. The experimental results including the scanning electron microscopy (SEM) images are presented to illustrate how the sharp corners vanish. The concave corners are encompassed by a smooth layer of silicon dioxide served as a gate oxide for vertical trenched MOSFET. Electrical measurement shows that the breakdown voltage was improved by eliminating the gate oxide weak spots
Starting Page	1
Ending Page	3
File Size	663768
Page Count	3
File Format	PDF
ISBN	9781424488254
ISSN	10898190
e-ISBN	9781424488278
DOI	10.1109/IEMT.2010.5746769
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-30
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Logic gates Oxidation Silicon MOSFET circuits Stress Surface morphology Manufacturing
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering

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