NDLI: Investigation of bond pad etching chemistries for passivation crack

Content Provider	IEEE Xplore Digital Library
Author	Ibrahim, R. Leoni, M. Au Yin Kheng Kenny, P.Z.S. Poh Leng Eu
Copyright Year	2010
Description	Author affiliation: R & D Center, Freescale Semiconductor Malaysia Sdn. Bhd., No. 2, Jalan SS 8/2, FIZ Sungei Way, 47000 Petaling Jaya, Selangor, Malaysia (Ibrahim, R.; Leoni, M.; Au Yin Kheng; Kenny, P.Z.S.; Poh Leng Eu)
Abstract	Wire bonding is still a very common method for connecting the pads on a chip to the package. During the ultrasonic wire bonding process, several failures such as ball neck failure, missing ball, bond metal peeling or crack etc., may be generated. Of those failures, bond pad peeling or crack is a phenomenon detected after bonding process and is identified as a critical reliability problem and is known as a complex defect to investigate. Bond pad cracks pose a high reliability risk and potential failure during environmental stress testing. Damage to the bond pad may be the result of sub optimized probe or wirebond process parameters, as well as poor pad design. In addition, bond pad cracks may be unintentionally induced by the cratering test chemical etch solution. There is a case where an assembly folk reported had a bond pad crack, but none of the parts have failure during electrical test or even after reliability stress. In such case, we believe the crack found at assembly was an artifact induced by etching chemical, resulting the over-rejecting the parts. This paper specifically discusses a comparative analysis of various bond pad etching methods and their impact on bond pad cracking. There are few interesting findings will also be shared during the discussions. Failure analysis results are also briefly discussed.
Starting Page	1
Ending Page	4
File Size	941229
Page Count	4
File Format	PDF
ISBN	9781424488254
ISSN	10898190
e-ISBN	9781424488278
DOI	10.1109/IEMT.2010.5746662
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-30
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gold Chemicals Wire Bonding Artificial intelligence Aluminum CMOS integrated circuits
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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