NDLI: Beyond refractive optical lithography next generation lithography "What's after 193 nm?"

Content Provider	IEEE Xplore Digital Library
Author	Seidel, P. Canning, J. Mackay, S.
Copyright Year	1997
Description	Author affiliation: SEMATECH, Austin, TX, USA (Seidel, P.)
Abstract	The integrated circuit industry growth will continue to rely on microlithography as a key enabler to drive chip productivity. Current optical lithography methods (i.e. 193 nm) have been projected to have resolving power down to 130 nm CD generation nodes. Beyond this capability there is a strong consensus that a "Next Generation Lithography" (NGL) technology will be needed to continue along SIA Roadmap timelines. Many NGL technologies are candidates for sub-130 nm CD manufacturing. Choosing the technology path with partial data and limited resources by YE 1997 to meet 130 nm/2003 and 100 nm/2007 generation nodes will require a consensus (international) decision process methodology.
Starting Page	334
Ending Page	341
File Size	1038378
Page Count	8
File Format	PDF
ISBN	0780339290
ISSN	10898190
DOI	10.1109/IEMT.1997.626940
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1997-10-13
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Optical refraction Lithography Manufacturing Productivity Resists Timing Image resolution Production Costs Acceleration
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Electrical and Electronic Engineering

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Beyond refractive optical lithography next generation lithography "What's after 193 nm?"