NDLI: Directly deposited lead-indium-gold composite solder

Content Provider	IEEE Xplore Digital Library
Author	Chen, Y.-C. Wang, C.Y. Lee, C.C.
Copyright Year	1993
Description	Author affiliation: Dept. of Electr. & Comput. Eng., California Univ., Irvine, CA, USA (Chen, Y.-C.; Wang, C.Y.; Lee, C.C.)
Abstract	Lead-indium-gold multilayer composite solder has been developed for bonding electronic devices. The composite is deposited directly on GaAs wafers in high vacuum to prevent indium oxidation. The gold layer on the composite further protects the indium layer from oxidation in the atmosphere. The GaAs dies are bonded to a gold-coated alumina substrate at a process temperature of 250/spl deg/C. Nearly perfect joints are achieved as verified by a scanning acoustic microscope. Scanning electron microscope and EDX (energy-dispersive X-ray analysis) results indicate that the alloy joint consists of AuIn/sub 2/ grains embedded in a In-Pb solid solution phase, as predicted from the Au-In-Pb phase diagram. Compared to lead-tin solder, indium-lead solder has been shown to exhibit much better fatigue resistance and have much less of a scavenging effect.<>
Starting Page	1004
Ending Page	1007
File Size	467754
Page Count	4
File Format	PDF
ISBN	0780307941
DOI	10.1109/ECTC.1993.346730
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-06-01
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Lead Wafer bonding Gallium arsenide Indium Oxidation Nonhomogeneous media Gold Protection Atmosphere Temperature
Content Type	Text
Resource Type	Article

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