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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Izuta, G. Abe, S. Hirota, J. Hayashi, O. Hoshinouchi, S. |
| Copyright Year | 1993 |
| Description | Author affiliation: Mitsubishi Electr. Corp., Hyogo, Japan (Izuta, G.) |
| Abstract | For high-power semiconductor devices with Cu lead-frames in plastic packages, die-bonding process that can obtain a heat-resistant bond (with high melting point) without large residual stress has been developed by applying transient liquid-phase bonding to the soldering process. A three-layered solder sheet the inner layer of which is 95Pb-5Sn solder and the surface layers of which are Pb-Sn eutectic solder is used as the bonding material. The bonding temperature is about 460 K so as to melt only eutectic layers. The eutectic layers are isothermally solidified and the melting point of the bond rises to over 520 K by a two-hour heat treatment at the bonding temperature. As a result, a heat-resistant bond can be obtained whose residual stress can be reduced by more than 1/2 by a low-temperature process.< |
| Starting Page | 1012 |
| Ending Page | 1016 |
| File Size | 406433 |
| Page Count | 5 |
| File Format | |
| ISBN | 0780307941 |
| DOI | 10.1109/ECTC.1993.346728 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 1993-06-01 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Soldering Large scale integration Bonding Residual stresses Temperature Semiconductor devices Lead compounds Plastic packaging Semiconductor device packaging Surface treatment |
| Content Type | Text |
| Resource Type | Article |
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