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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Li Zhang Saitoh, M. Kinoshita, A. Yasutake, N. Hokazono, A. Aoki, N. Kusunoki, N. Mizushima, I. Koike, M. Takeno, S. Koga, J. |
| Copyright Year | 2009 |
| Description | Author affiliation: System LSI Division, Semiconductor Company, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan (Kusunoki, N.) || Center for Semiconductor Research and Development, Semiconductor Company, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan (Yasutake, N.; Hokazono, A.; Aoki, N.) || Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan (Mizushima, I.) || Advanced LSI Technology Laboratory, Corporate Research & Development Center, Semiconductor Company, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan (Li Zhang; Saitoh, M.; Kinoshita, A.; Koike, M.; Takeno, S.; Koga, J.) |
| Abstract | For the first time, high-resolution carrier imaging has been carried out on (110)/(100) pFETs and nFETs with scanning spreading resistance microscopy (SSRM). The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron I/I. Direct evidence has been shown that As out-diffusion under NiSi made conductive paths that degrade junction leakage on (110) nFETs. The Si:C influences on S/D profiles are also directly observed. We also succeeded in a full-FIB sample-making for the first time, showing the high potential of SSRM technology for further scaled devices. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1043185 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424456390 |
| e-ISBN | 9781424456413 |
| e-ISBN | 9781424456406 |
| DOI | 10.1109/IEDM.2009.5424427 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | High-resolution imaging Microscopy Degradation CMOSFETs Large scale integration Boron Electrical resistance measurement Circuits Bonding Laboratories |
| Content Type | Text |
| Resource Type | Article |
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