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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Huang, J. Goel, N. Zhao, H. Kang, C.Y. Min, K.S. Bersuker, G. Oktyabrsky, S. Gaspe, C.K. Santos, M.B. Majhi, P. Kirsch, P.D. Tseng, H.-H. Lee, J.C. Jammy, R. |
| Copyright Year | 2009 |
| Description | Author affiliation: University of Oklahoma, USA (Gaspe, C.K.; Santos, M.B.) || UT Austin, USA (Zhao, H.; Lee, J.C.) || SEMATECH 2706 Montopolis Drive, Austin, TX 78741, U.S.A. (Huang, J.; Goel, N.; Kang, C.Y.; Min, K.S.; Bersuker, G.; Majhi, P.; Kirsch, P.D.; Jammy, R.) || Texas State University, USA (Tseng, H.-H.) || SUNY-Albany, USA (Oktyabrsky, S.) |
| Abstract | The performance and reliability of ZrO2/In0.53Ga0.47As MOSFETs are shown to be improved by simultaneous reduction of dielectric and interface charges. An amorphous (La)AlOx interlayer at the ZrO2/In0.53Ga0.47As interface is a key to reduce border traps, interface traps and move ZrO2 fixed charge away from the In0.53Ga0.47As. Border traps are reduced ∼3x, effective fixed charges are reduced ∼3x and interface trap density is reduced ∼1.5x. The net effect of the improved stack is 50% normalized Id improvement and 75% normalized Gm improvement. P/NBTI cyclic stress results indicate Al2O3/ZrO2 is more reliable than ZrO2 only. ΔVth of the bilayer show excellent repeatability; conversely, ΔVth of ZrO2 shows permanent (not recoverable) interface degradation during relaxation (NBTI stress). La incorporation in Al2O3 increases the к-value while providing improved reliability over both the ZrO2 and Al2O3/ZrO2 stack. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 624945 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424456390 |
| e-ISBN | 9781424456413 |
| e-ISBN | 9781424456406 |
| DOI | 10.1109/IEDM.2009.5424357 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Indium gallium arsenide MOSFET circuits Aluminum oxide Dielectrics Scattering Amorphous materials Niobium compounds Titanium compounds Stress CMOS technology |
| Content Type | Text |
| Resource Type | Article |
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