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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Grasser, T. Reisinger, H. Goes, W. Aichinger, T. Hehenberger, P. Wagner, P.-J. Nelhiebel, M. Franco, J. Kaczer, B. |
| Copyright Year | 2009 |
| Description | Author affiliation: Christian Doppler Laboratory for TCAD, TU Wien, A-1040, Austria (Grasser, T.; Goes, W.; Wagner, P.-J.) || Infineon, München, Germany (Reisinger, H.) || Infineon, Villach, Austria (Nelhiebel, M.) || IMEC, B-3001 Leuven, Belgium (Franco, J.; Kaczer, B.) || Institute for Microelectronics, TU Wien, A-1040, Austria (Hehenberger, P.) || KAI, Villach, Austria (Aichinger, T.) |
| Abstract | Due to the ongoing reduction in device geometries, the statistical properties of a few defects can significantly alter and degrade the electrical behavior of nano-scale devices. These statistical alterations have commonly been studied in the form of random telegraph noise (RTN). Here we show that a switching trap model previously suggested for the recoverable component of the negative bias temperature instability (NBTI) can more accurately describe the bias and temperature dependence of RTN than established models. We demonstrate both theoretically and experimentally, that the recovery following bias temperature stress can be considered the non-equilibrium incarnation of RTN, caused by similar defects. We furthermore demonstrate that the recoverable component is solely constituted by individual and uncorrelated discharging of defects and that no diffusive component exists. Finally it is highlighted that the capture and emission times of these defects are uncorrelated. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 445386 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424456390 |
| e-ISBN | 9781424456413 |
| e-ISBN | 9781424456406 |
| DOI | 10.1109/IEDM.2009.5424235 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Negative bias temperature instability Telegraphy Niobium compounds Titanium compounds Temperature dependence Stress MOSFETs Predictive models Degradation Mirrors |
| Content Type | Text |
| Resource Type | Article |
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