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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hyun-Yong Yu Kobayashi, M. Woo Shik Jung Okyay, A.K. Yoshio Nishi Saraswat, K.C. |
| Copyright Year | 2009 |
| Description | Author affiliation: Department of Electrical Engineering, Stanford University, CIS, CA, 94305, USA (Hyun-Yong Yu; Kobayashi, M.; Woo Shik Jung; Yoshio Nishi; Saraswat, K.C.) || Department of Electrical and Electronics Engineering, Bilkent University, Ankara, Turkey 06800 (Okyay, A.K.) |
| Abstract | We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality single crystal Ge selectively grown heteroepitaxially on Si using Multiple Hydrogen Anealing for Heteroepitaxy(MHAH) technique. Until now low source/drain series resistance in Ge n-MOSFETs has been a highly challenging problem. Source and drain are formed by implant-free, in-situ doping process for the purpose of very low series resistance and abrupt and shallow $n^{+}/p$ junctions. The novel n-MOSFETs show among the highest electron mobility reported on (100) Ge to-date. Furthermore, these devices provide an excellent Ion/Ioff $ratio(4×10^{3})$ with very high Ion of 3.23µA/µm. These results show promise towards monolithic integration of Ge MOSFETs with Si CMOS VLSI platform. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 589225 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424456390 |
| e-ISBN | 9781424456413 |
| e-ISBN | 9781424456406 |
| DOI | 10.1109/IEDM.2009.5424245 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFET circuits Monolithic integrated circuits Hydrogen Annealing Doping Temperature Very large scale integration Epitaxial growth Atomic force microscopy Computational Intelligence Society |
| Content Type | Text |
| Resource Type | Article |
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