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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Jun Fujiki Yasuda, N. Fujitsuka, R. Sakamoto, W. Muraoka, K. |
| Copyright Year | 2009 |
| Description | Author affiliation: Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (Jun Fujiki; Yasuda, N.; Muraoka, K.) || Center of Semiconductor Research and Development, Secmiconductor Company, Toshiba, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (Sakamoto, W.) || Advanced Microelectronics Center, Semiconductor Company, Toshiba, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan (Fujitsuka, R.) |
| Abstract | High-k materials, such as HfO2 and Al2O3, are known to have dielectric relaxation effect (i.e. slow polarization) [1][2]. It is reported for the first time in this work that Al2O3, used as a blocking layer of MANOS NAND flash memory cells, causes modulation of channel current through its dielectric relaxation, resulting in severe transient threshold voltage shift as much as ∼ 0.8V. This Vth drift cannot be controlled by bit-by-bit verify method, and will severely deteriorate multi-level functionality of NAND flash memory cells. In this work we propose two solutions for this issue. The first one is to give appropriate pre-bias to the word lines of a NAND string before a reading pulse sequence so that the Vth drift due to dielectric relaxation can be compensated. The second one is to implement an Al2O3/SiO2/Al2O3 (AOA) stacked blocking layer (Fig.1(b)) instead of an Al2O3 single layer (Fig.1(a)). With these solutions, the transient Vth drift due to dielectric relaxation can be eliminated entirely. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 904478 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424456390 |
| e-ISBN | 9781424456413 |
| e-ISBN | 9781424456406 |
| DOI | 10.1109/IEDM.2009.5424334 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | High K dielectric materials High-K gate dielectrics Aluminum oxide Pulse measurements Polarization Threshold voltage Dielectric measurements Current measurement Semiconductor materials Research and development |
| Content Type | Text |
| Resource Type | Article |
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