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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kang, C.Y. Choi, R. Song, S.C. Choi, K. Ju, B.S. Hussain, M.M. Lee, B.H. Bersuker, G. Young, C. Heh, D. Kirsch, P. Barnet, J. Yang, J.-W. Xiong, W. Tseng, H.-H. Jammy, R. |
| Copyright Year | 2006 |
| Description | Author affiliation: SEMATECH, Austin, TX (Kang, C.Y.; Choi, R.; Song, S.C.; Choi, K.; Ju, B.S.; Hussain, M.M.) |
| Abstract | If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly. Electron mobility degradation at Si(110) channel of finFET has been one of the major barriers in this path. We report a creative method to improve electron and hole mobilities using a novel metal electrode induced-strain engineering, which also features the effective workfunction tuning of single metal electrode on high-k dielectric. Compared to planar SOI devices, our optimized SOI FinFETs with metal/high-k stack showed high field mobility for a (110)/lang110rang nMOSFETs, which increased almost two times. By optimizing the workfunction and the strain effect, we achieved an $I_{on}$ of 930 muA/mum and 680muA/mum for nMOSFETs and pMOSFETs without implementing any other stress engineering process |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 553915 |
| Page Count | 4 |
| File Format | |
| ISBN | 142440438X |
| DOI | 10.1109/IEDM.2006.346924 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-12-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Capacitive sensors FinFETs MOSFETs Electron mobility Electrodes High-K gate dielectrics MOS devices Degradation Charge carrier processes High K dielectric materials |
| Content Type | Text |
| Resource Type | Article |
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