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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Byeong-Ok Cho Takahiro Yasue Hongsik Yoon Moon-Sook Lee In-Seok Yeo U-In Chung Joo-Tae Moon Byung-Il Ryu |
| Copyright Year | 2006 |
| Description | Author affiliation: Semicond. R&D Div., Samsung Electron. Co. Ltd., Gyeonggi-Do (Byeong-Ok Cho; Takahiro Yasue; Hongsik Yoon; Moon-Sook Lee; In-Seok Yeo; U-In Chung; Joo-Tae Moon; Byung-Il Ryu) |
| Abstract | The feasibility of the charge-transfer based polymer resistive memory as a future data storage device was tested using a thermally robust polyimide and PCBM composite film, available by low-cost solution processing. The prototype device with a simple 4F cross-point cell structure demonstrated basic non-volatile memory functions (> 1000 write/erase cycles and 1-week data retention in an ambient without encapsulation). Not only bi-polar but also uni-polar operation scheme with multi-level programming worked for the device. The cells on both the top and the bottom layers of a stacked device with additional heat budget of > 300 degC for 1 hour exhibited no degradation on the performance |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 529622 |
| Page Count | 4 |
| File Format | |
| ISBN | 142440438X |
| DOI | 10.1109/IEDM.2006.346729 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-12-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thermal resistance Robustness Nonvolatile memory Polymer films Polyimides Electrodes Electron traps Voltage Scalability CMOS process |
| Content Type | Text |
| Resource Type | Article |
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