NDLI: Hot-carrier induced drain leakage current in n-channel MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Sasaki, H. Saitoh, M. Hashimoto, K.
Copyright Year	1987
Description	Author affiliation: Toshiba Corp., Kawasaki, Japan (Sasaki, H.)
Abstract	Hot-carrier induced drain leakage current in n-channel MOSFET's has been found. Two leakage mechanisms exist at least. The leakage current for one mechanism can be characterized by it, exponential dependence on the drain voltage, approximate proportionality to the stress time, and very small (0.10eV) activation energy. The other mechanism can be characterized by its somewhat ohmic-like dependence on the drain voltage, approximate quadratic dependence on the stress time, and relatively large (0.29eV) activation energy. When stress is imposed by triode-mode operation, the former mechanism is dominant. For pentode-mode operation, the former is followed by the latter. The drain leakage current is observed for conventional, LDD and ALDD (Advanced LDD) structures, although they differ in magnitude. This hot-carrier induced drain leakage current may cause functional failure in DRAM cell or in resistor-load type SRAM cell, while the corresponding degradation in channel conductance may not.
Starting Page	726
Ending Page	729
File Size	279147
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1987.191533
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Leakage current MOSFET circuits Stress Random access memory Degradation Annealing Threshold voltage Temperature measurement Semiconductor devices
Content Type	Text
Resource Type	Article

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