NDLI: A super self-aligned source/drain MOSFET

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Plenary session—Invited papers

The revolution in high Tcsuperconductivity—Status and prospects for electronic applications

Analog IC's in the submicron era: Trends and perspectives

Session 2 Device technology — Selective epitaxy and merged bipolar — CMOS technology

Novel device structures by selective epitaxial growth (SEG)

Novel selective poly - and epitaxial - Silicon growth (SPEG) technique for ULSI processing

A submicron dual buried layer twin well CMOS SEG process

A high speed super self-aligned bipolar-CMOS technology

0.8µm Bi-CMOS technology with high fTion-implanted emitter bipolar transistor

A self-aligning polysilicon electrode technology (SPEL) for future LSIs

Session 3 Solid state devices — Hot carrier effects

The impact of gate-drain overlapped LDD (GOLD) for deep submicron VLSI's

Hot carrier induced degradation mode depending on the LDD structure in NMOSFET's

Quasi-static simulation of hot-electron-induced MOSFET degradation under AC (pulse) stress

Asymmetrical high field effects in submicron MOSFET's

Hot carrier aging in two level metal processing

Session 4 Quantum electronics and compound semiconductor devices — New heterojunction electron devices

Novel heterojunction devices

Power-optimized design of quantum well oscillators

Observation of resonant tunneling through a compositionally graded parabolic quantum well

Device physics of quantum-well heterostructure $MI^{3}SFET's$

A new GaAs bipolar-unipolar transition negative differential resistance device (BUNDR)

A new two-dimensional electron gas base transistor (2DEG-HBT)

Electrical properties of thermally annealed p-GaAs/n-Si heterojunctions and the implications for a GaAs-Si heterojunction bipolar transistor

Session 5 Integrated circuits — High speed/High density systems

GaAs-on-silicon integrated circuits; Savior for GaAs ? or for Si ?

Waveform measurements in high speed silicon bipolar circuits using a picosecond photoelectron scanning electron microscope

Potential of bipolar complementary device/Circuit technology

High-density, large scale interconnection for improved VLSI system performance

Orthogonal chip mount - A 3D hybrid wafer scale integration technology

Neural network based feed-forward high density associative memory

Three dimensional IC for high performance image signal processor

Session 6 Detectors, sensors, and displays — Image sensor technology

A high sensitivity output amplifier for CCD image sensor

A 1.4 million element, full frame CCD image sensor with vertical overflow drain for anti-blooming and low color crosstalk

IrSi Schottky-barrier infrared image sensor

Performance of a multiplexed linear array of 300 InGaAs photodiodes

Enhancement mode HgCdTe MISFETs and circuits for focal plane applications

Overlapping Schottky gate CCDs on GaAs formed by anodic oxidation

Session 7 Electron tubes — General

European microwave tubes: Business and technology

A modular shadow-gridded high power switch tube

$Crossatron^{(TM)}switch$ development at hughes electron dynamics division (HEDD)

An experimental $clustered-cavity^{TM}Klystron$

Klystron performance using a multistage depressed collector

Simulation and analysis of a reentrant planar magnetron

Coupled back-strapped bar-line analysis for low-noise CFA's

Session 8 Solid state devices — Advanced bipolar devices

Process and device related scaling considerations for polysilicon emitter bipolar transistors

On the narrow-emitter effect of advanced shallow profile bipolar transistors

Transient imposed scaling considerations in advanced narrow-emitter bipolar transistors

Poly emitter bipolar hot carrier effects in an advanced BiCMOS technology

Micro-crystalline hetero-emitter with high injection efficiency for Si HBT

A high current gain Si HBT with a hydrogenated micro-crystalline Si emitter

A novel ion-implanted amorphous silicon programmable element

Session 9 Device technology — Interconnect technology

Recent development in multilevel interconnect technology

Reliable tungsten encapsulated Al-Si interconnects for submicron multilevel interconnection

Submicron wiring technology with tungsten and planarization

Selective CVD tungsten silicide for VLSI applications

A highly reliable selective CVD-W utilizing SiH4 reduction for VLSI contacts

Session 10 Quantum electronics and compound semiconductor devices — Optoelectronics and integration

Advances in optical interconnect technology

Planar structure optoelectronic integrated circuits: Towards advanced optical processing and communication

5.2GHz monolithic GaAs optoelectronic receiver

Wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy

Photoexcited coherent tunneling in 10µm multiquantum well photodetector

High speed modulation and CW operation of AlGaAs/GaAs lasers on Si

Session 11 Modeling and simulation — Si/GaAs device and process simulation

An accurate bipolar model for large signal transient and ac applications

A self-consistent particle simulation for (AlGa) As/GaAs HBTs with improved base-collector structures

GaAs MESFET - IC side-gating effect model

SUPREM 3.5, process modeling of gallium arsenide

Process models for ultra-shallow junction technologies

Modeling of stress-effects in silicon oxidation including the non-linear viscosity of oxide

Process diagnostic and fluctuation analysis using a two-dimensional simulation system with a new linearized iteration method

Session 12 Detectors, sensors, and displays — Microsensor technology

High temperature microelectronics—Expanding the applications for smart sensors

Thermal conductivity of heavily doped LPCVD polysilicon

Fabrication and testing of a micromachined shear sensor

An analytical model of a new magnetotransistor: The SSIMT

Sensing in liquids using acoustic plate mode devices

Response of an acoustic charge transport device to near-infrared radiation

Session 13 Electron tubes — Millimeter wave devices

The Cerenkov free-electron laser

Recent orotron results

First observation of the inverse Smith-Purcell effect

Recent peniotron results at 45 GHz

A wideband, high-power O-type carcinotron operating near 94 GHz

Neural networks

Session 14 Integrated circuits — Dynamic memories

Process technologies for high density, high speed 16 megabit dynamic RAM

Double stacked capacitor with self-aligned poly source/drain transistor (DSP) cell for megabit DRAM

A $4.2µm^{2}Half-VCCsheath-plate-capacitor$ DRAM cell with self-aligned buried plate-wiring

A meta-stable leakage phenomenon in DRAM charge storage —Variable hold time

Parasitic leakage in DRAM trench storage capacitor vertical gated diodes

A new soft-error immune DRAM cell with a transistor on a lateral epitaxial silicon layer (TOLE cell)

Room temperature dynamic memories for GaAs integrated circuits

Session 15 Device technology — CMOS and BIPOLAR process integration

Self-aligned contact schemes for source-drains in submicron devices

A super self-aligned source/drain MOSFET

An 0.8µm CMOS technology for high performance logic applications

0.25 µm CMOS technology using $P^{+}polysilicon$ gate PMOSFET

A sub-40 ps ECL circuit at a switching current of 1.28 MA

BSA Technology for sub-100nm deep base bipolar transistors

Session 16 Solid-state devices — Low temperature device operation

Integration of superconducting technology for a 50 GHz sampling oscilloscope chip

Vertically integrated Josephson circuits with stacked Nb/Alox/Nb junctions

Quantum flux parametron

Effect of interconnection delay on liquid nitrogen temperature CMOS circuit performance

Experimental technology and characterization of self-aligned 0.1µm-gate-length low-temperature operation NMOS devices

Optimization of bipolar transistors for low temperature operation

High performance operation of silicon bipolar transistors at liquid nitrogen temperature

Session 17 Quantum electronics and compound semiconductor devices — Pseudomorphic heterostructure FET's

High performance 0.1µm gate-length planar-doped HEMTs

A comparison of low- and high-frequency noise spectra of 0.1 micron gate-length conventional, pseudomorphic, and planar-doped MODFET structures

Characterization of pseudomorphic InGaAs/AlGaAs MODFET structures grown by molecular beam epitaxy

Strained N-AlGaAs/InGaAs/N-AlGaAs selectively-doped double-heterojunction FET

Effect of channel strain on the electrical characteristics of InGaAs/InAlAs HEMTs

A high performance 0.12 um T-shape gate Ga0.5In0.5As/Al0.5In0.5As MODFET grown by MBE lattice mis-matched on a GaAs substrate

Session 18 Detectors, sensors, and displays — Solid state display & detector technology

High-performance low-temperature poly-Si TFTs for LCD

Device design considerations of a novel high voltage amorphous silicon thin film transistor

Application of ion-implantation method to amorphous silicon thin-film-transistors

A 10MHz integrated driver circuit for active-matrix LCDs using laser-recrystallized silicon TFTs

Epitaxial silicon single photon detector with reduced carrier diffusion effect and picosecond resolution

The amorphous SiC/Si two and three-color detector with high rejection ratio

SOI photodiode array stacked on VDMOS for optical switching

Session 19 Electron tubes — Traveling wave tubes

100 W 18-40 GHz traveling wave tube

A 2 kilowatt CW PPM-focussed X-band helix TWT

High-efficiency helical traveling-wave tube with dynamic velocity taper and advanced multistage depressed collector

New helix tapers boost space TWT efficiency to 55%, broadband

Empirical evaluation of loss mechanisms in high frequency helix circuits

Serpentine waveguide TWT

A CFPPM focused 250 watt CW millitron at 27-30 GHz

Session 20 Modeling and simulation — Hot electron, current crowding, and alpha-particle models

Surface impact ionization in silicon devices

Circuit hot electron effect simulation

Transient substrate current delay in NMOSFETs

Modeling of hot carrier effects based on two-dimensional distribution of electron temperature

A method to reduce the peak current density in a via

Three dimensional transient simulation of electro-thermal behavior in semiconductor devices and its applications

CMOS SRAM alpha particle modelling and experimental results

Session 21 GaAs on Si technology

Session 22 Advanced IC interconnect technology

Session 23 Application dependency of technology choice — CMOS, bipolar, BiCMOS

Session 24 Integrating sensors and electronics: Where to draw the line?

Session 25 Integrated circuits — Static and non-volatile memories

A 1M SRAM with full CMOS cells fabricated in a 0.7µm technology

A 60 $µm^{2}SOI$ CMOS SRAM cell formed by new artificial seed method

Scaling studies of CMOS SRAM soft-error tolerances—From 16K to 256K

Programming mode dependent degradation of tunnel oxide floating gate devices

A new self-aligned planar array cell for ultra high density EPROMs

New ultra high density EPROM and flash EEPROM with NAND structure cell

Novel process and device technologies for submicron 4Mb CMOS EPROMs

A flash-erase EEPROM cell with an asymmetric source and drain structure

Session 26 Device technology — Dielectrics and shallow junctions

Observation of single electron trapping using scanning tunneling microscopy

Ultra-thin re-oxidized nitrided-oxides prepared by rapid thermal processing

The effect of fluorine on gate dielectric properties

+ BT Instability in $P^{+}poly$ gate MOS structure

A high quality high temperature compatible Tantalum oxide film for advanced dRAM applications

Ultra-shallow $p^{+}junction$ formed by photo-enhanced low-temperature epitaxy

High performance half-micron PMOSFETs with 0.1um shallow $P^{+}N$ junction utilizing selective silicon growth and rapid thermal annealing

Session 27 Quantum electronics and compound semiconductor devices — High-speed III-V devices

High-current GaAs/AlGaAs MODFETs with fTover 80 GHz

High performance refractory gate self-aligned GaAs MESFETs fabricated by arsine ambient rapid thermal annealing

A high-speed static frequency divider employing $n^{+}-Ge$ gate AlGaAs/GaAs MISFETs

DC and microwave performance of Indium-based heterojunction field-effect transistor fabricated on Si-InP

High-speed enhancement mode InP MISFETs grown by Chloride vapor phase epitaxy

Dependence of base built-in field for InAlAs/InGaAs HBT characteristics

High power GaAlAs/GaAs HBTs for microwave applications

High performance sample-and-hold implemented with GaAs/AlGaAs heterojunction bipolar transistor technology

Session 28 Modeling and simulation — MOS modeling

Design methodology for deep submicron CMOS

Submicron short channel effects due to gate reoxidation induced lateral interstitial diffusion

Steep subthreshold characteristic and enhanced transconductance of fully-recessed oxide (trench) isolated 1/4 µm width MOSFETs

High performance SOIMOSFET using ultra-thin SOI film

Analysis of MOS phototransistor operation by 2-D simulation using cylindrical coordinates

Microscopic mobility of electrons in weakly inverted MOSFETs

A non-quasistatic MOSFET model for SPICE

Session 29 Solid-state devices — Discrete power devices

"The merged P-I-N Schottky (MPS) rectifier: A high-voltage, high-speed power diode"

The field assisted turn-off thyristor: A regenerative device with voltage controlled turn-off

A large area MOS-GTO with wafer-repair technique

P-channel, vertical insulated gate bipolar transistors with collector short

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

Study of Si-wafer directly bonded interface effect on power device characteristics

A non-destructive technique for the evaluation of electric field regions in semiconductor devices

Session 30 Electron tubes — Cathodes

Modern thermionic cathodes

Long-life high-reliability Ir-coated dispenser cathode

Life test results of various impregnated cathode types

Optical probes for cathode characterization

Observation of apparent compensation behavior in thermionic electron emission

Use of the work function distribution for cathode characterization

Session 31 Solid-state devices — MOSFET scaling

Performance and hot-electron reliability of deep-submicron MOSFET's

Corner-field induced drain leakage in thin oxide MOSFETs

The impact of gate-induced drain leakage current on MOSFET scaling

Accurate criterion for MOSFET effective gate length extraction using the capacitance method

Hot-carrier induced drain leakage current in n-channel MOSFET

Session 32 Device technology — Isolation & lithography

A practical trench isolation technology with a novel planarization process

New effects of trench isolated transistor using side-wall gates

Novel germanium/boron channel-stop implantation for submicron CMOS

Oxygen implantation for improved CMOS latchup immunity

Holographic nanometer alignment system for a half-micron wafer stepper

E-beam direct wafer writing process using water-soluble conductive layer (WSCL)

Session 33 Solid-state devices — High voltage IC's and lateral power devices

3-D high-voltage CMOS ICs by recrystallized SOI merged with bulk control-unit

Novel dielectrically isolated intelligent power IC technology using vertical lateral composite structure (VLCS)

Design of a high side driver in multipower-BCD and VIPower technologies

P-channel Schottky injection field effect transistors

Latching in lateral insulated gate bipolar transistors

LDMOS and LIGT's in CMOS technology for power integrated circuits

Session 34 Quantum electronics and compound semiconductor devices — Lasers

Distributed-reflector GaInAsP/InP dynamic-single-mode lasers for lightwave communications

720-780 nm AlGaAs/GaAs DFB lasers with InGaAsP waveguiding layers

GaAs/AlGaAs surface emitting laser diode with vertical distributed feedback optical cavity and transverse junction buried heterostructure

Ultimate limit in low threshold quantum well GaAlAs semiconductor lasers

Improved fundamental properties in

The electro-optical effects of externally applied

Session 35 Electron tubes — Fast wave devices

Operation of a step tunable, megawatt gyrotron

100 GHz gyrotron development: Main results and conclusions

Experimental mode priming of an overmoded gyrotron oscillator

Operation of a large orbit, high harmonic Gyro-TWT amplifier

Design and fabrication of a 500 KV MIG gun for a 30 MW gyroklystron

Enhancement of traveling wave gain and efficiency with a gyroresonant phase filter

Advanced bipolar process using selective poly- and epitaxial-Si (SPEG) technique

0.5 Micron BICMOS technology

An 0.8 µm 256K BiCMOS SRAM technology

Increased degradation of half-micron PMOSFETs due to swapped pulse stressing

Radiation and hot-electron hardened MOS structures based on SiO2grown in O2+NF3

A non-volatile memory cell based on ferroelectric storage capacitors

OMCVD Grown InP/InGaAs heterojunction bipolar transistors

Millimeter wave double heterojunction pseudomorphic power HEMTs

1 THz bandwidth probing of devices and integrated circuits

An 8.6 um2 cell technology for a 35.5 mm2 megabit EPROM

Selective tungsten plugs on silicon for advanced CMOS devices

A 2.5-ps Josephson or gate

Novel magnetic sensor using Y-Ba-Cu-O ceramic superconductor: Super magneto-resistor

Generation of very high peak powers at X-band from klystrons

Soft error rate of 64K SOI-DRAM

Fabrication results of a silicon epitaxial lateral overgrowth bipolar transistor without a buried collector

Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy

InAlAs/InGaAs resonant tunneling bipolar transistors (RBTs) operating at room temperature with high current gains

Ultra-high speed AlInAs-GaInAs HEMT technology

High voltage high mobility low leakage current CVD-polycrystalline based, thin film transistor using conventional processing

A novel acoustic charge transport device utilizing GaAs/(Al, Ga)As heterojunctions (HACT)

Very low threshold AlGaAs/GaAs lasers grown on tilted

Oxides grown on textured single-crystal silicon for low programming voltage non-volatile memory applications

Complementary MODFET circuits consisting of pseudomorphic NMODFET and double heterojunction PMODFET by selective molecular beam epitaxy

Semiconductor lasers with very high quality etched facets

Guided-wave GaAs/AlGaAs FET optical modulator based on free-carrier-induced bleaching

An overview of epitaxial GaAs on Si technology

Relationship between the relationship of trapped holes and interface state generation in the Si/SiO2system

Optical and electrical characteristics of GaAs/AlGaAs GRIN-SCH lasers grown selectively by MBE on SiO2-patterned substrate

Harmonic auto-resonant peniotron (HARP) interactions

An advanced submicron CMOS technology with 2µm pitch at all levels

Doped channel pseudomorphic GaAs/InGaAs/AlGaAs hetero-structure FETs

An organosilicon photoresist for use in excimer laser lithography

Experimental study of GYRO-BWO

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A super self-aligned source/drain MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Lau, C.K. Shibata, H. Saitoh, M. Matsuno, T. Samata, S. Itoh, H. Sasaki, H. Hashimoto, K.
Copyright Year	1987
Description	Author affiliation: Hewlett-Packard Company, Palo Alto, CA, USA (Lau, C.K.)
Abstract	A novel MOSFET structure is presented in which the source/drain area is minimized by self-aligning to the gate polysilicon. This is achieved by forming a nitride spacer followed by a second field oxidation after gate delineation. A selective silicon growth technique is used to extend the source/drain over the second field oxide for easy contacting. A fully self-aligned contact scheme is employed to conserve overall device area. Besides saving device area and minimizing parasitic capacitance, experimental results at one-micron geometry indicate that other device characteristics are similar to that of the conventional LDD-MOSFET. This device is expected to be scalable well into the submicron regime.
Starting Page	358
Ending Page	361
File Size	391867
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1987.191431
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Oxidation Silicon Parasitic capacitance Implants Protection Etching Very large scale integration Anisotropic magnetoresistance Semiconductor devices
Content Type	Text
Resource Type	Article

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