NDLI: New degradation phenomena by source and drain hot-carriers in half-micron P-MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Mizuno, T. Kumagai, J. Matsumoto, Y. Sawada, S. Shinozaki, S.
Copyright Year	1986
Description	Author affiliation: Toshiba Corporation, Kawasaki, Japan (Mizuno, T.)
Abstract	Hot-carrier phenomena in half-micron offset type P-MOSFETs have been investigated, comparing to that of conventional ones with the same effective channel length. At high gate bias stress test, it is newly found that injected source hot-holes cause large minus Vthshift in the forward mode measurement. In addition, in the drain region, double injections of hot-electron and hot-hole occurs. As a result, Vthshift in the reverse mode changes from plus to minus with stress time. As source hot-holes are considered to affect the reliability of actual CMOS circuits, it as important to introduce the LDD structure into half-micron P-MOSFETs to reduce the high electric field in the source region.
Starting Page	726
Ending Page	729
File Size	261550
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1986.191296
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1986-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Hot carriers MOSFET circuits Testing Hot carrier effects Stress measurement Boron Semiconductor devices Laboratories Current measurement
Content Type	Text
Resource Type	Article

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New degradation phenomena by source and drain hot-carriers in half-micron P-MOSFETs