NDLI: High power GaAlAs/GaAs HBTs for microwave applications

Content Provider	IEEE Xplore Digital Library
Author	Sheng, N.H. Chang, M.F. Asbeck, P.M. Wang, K.C. Sullivan, G.J. Miller, D.L. Higgins, J.A. Sovero, E. Basit, H.
Copyright Year	1987
Description	Author affiliation: Rockwell International Science Center, Thousand Oaks, CA (Sheng, N.H.)
Abstract	This paper reports the attainment of high microwave output, up to 0.4 W cw at 10 GHz, with GaAlAs/ GaAs heterojunction bipolar transistors. In addition to high power, the HBTs displayed excellent power-added efficiency (4896) and power gain (7 dB). A key factor in obtaining these high powers and efficiencies is the ability to support high collector-emitter voltages without breakdown. Breakdown voltage was up to 23 V (BVcbo) in the devices reported here. The experimental data are in good agreement with a theoretical model of I-V characteristics near breakdown. The cutoff frequency ftwas found to vary with Vceas expected for electron-drift at a saturation veloclty of 1 × $10^{7}cm/s$ across the base-collector depletion region.
Starting Page	619
Ending Page	622
File Size	361148
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1987.191503
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Breakdown voltage Microwave devices Power transistors Epitaxial layers Silicon Doping Substrates Gain
Content Type	Text
Resource Type	Article

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