NDLI: High performance sample-and-hold implemented with GaAs/AlGaAs heterojunction bipolar transistor technology

Content Provider	IEEE Xplore Digital Library
Author	Gorman, G.M. Camou, J.B. Oki, A.K. Oyama, B.K. Kim, M.E.
Copyright Year	1987
Description	Author affiliation: TRW Inc., Redondo Beach, CA (Gorman, G.M.)
Abstract	A high-speed monolithic sample-and-hold (S/H) implemented with a GaAs/AlGaAs heterojunction bipolar transistor (HBT) IC technology is presented. This circuit is believed to be the first GaAs HBT S/H demonstrated. The S/H fabrication employs molecular-beam epitaxy and circuit integration with 3 µm emitter HBT, integrated Schottky diode, thin-film resistor, MIM capacitor, and double-level metal interconnect. S/H speed performance includes track bandwidth (-3 dB) of 1.8 GHz and sampled-mode analog bandwidth of 400 MHz at a sample rate of 800 Ms/s. The low frequency distortion (3rd harmonic) was at least -50 dBc for an input amplitude of 250 mV peak-to-peak. Preliminary test results indicate that the S/H has the potential for the accuracy required in 8-bit data conversion systems up to 400 Ms/s. Further development in processing is expected to improve both sampling rate and accuracy.
Starting Page	623
Ending Page	626
File Size	456896
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1987.191504
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Bandwidth Bipolar integrated circuits Monolithic integrated circuits High speed integrated circuits Integrated circuit technology Fabrication Molecular beam epitaxial growth Schottky diodes
Content Type	Text
Resource Type	Article

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