NDLI: Latching in lateral insulated gate bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Chow, T.P. Pattanayak, D.N. Baliga, B.J. Adler, M.S.
Copyright Year	1987
Description	Author affiliation: General Electric Company, Schenectady, NY (Chow, T.P.)
Abstract	The maximum gate controllable current of several different lateral insulated gate bipolar transistor (LIGBT) structures have been investigated. It is shown that the turn-on gate resistance affects the latching current of LIGBT's because of the faster turn-on of the lateral current component than the vertical current component. Addition of p+ sinker, n+ buried layer and surface shorts on the cathode side to the basic LIGBT are found to increase the maximum controllable current but addition of surface anode shorts degrades it. The effect of using SIPOS and oxide as surface passivation layer on latching are compared. The maximum controllable current of LIGBT's is shown to decrease with increasing temperature, as expected, but the rate of decrease is slower than the vertical IGBT's. P-channel devices are worse in latching performance than the n-channel counterparts.
Starting Page	774
Ending Page	777
File Size	599688
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1987.191546
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-12-06
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Anodes Cathodes Thyristors Bipolar transistors Voltage Fabrication Research and development Degradation Passivation
Content Type	Text
Resource Type	Article

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