NDLI: High-performance GaAs heterojunction bipolar transistor monolithic logarithmic IF amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Oki, A.K. Kim, M.E. Gorman, G.M. Camou, J.B.
Copyright Year	1963
Abstract	Logarithmic IF amplifiers that implement both true and successive-detection designs are reported. Monolithically cascaded log gain stages are used to achieve piecewise-approximated logarithmic functions for the compression of signals over a wide dynamic range. The heterojunction bipolar transistor (HBT) IC fabrication process is based on a 3- mu m-emitter, self-aligned-base ohmic metal transistor using both molecular-beam epitaxy (MBE) and metal-organic metal vapor deposition (MOCVD) growth structures. The true log amp integrates four dual-gain (limiting and unity gain) stages without on-chip video detection. Its performance includes DC-3-GHz IF/video bandwidth, 400-ps rise time, <+or-dB log error over approximately=40-dB dynamic range at 3 GHz, and a tangential signal sensitivity (noise) of -60 dBm (test-set limited). The successive-detection log amp, designed for lower frequency and dynamic range applications, uses three limiting gain stages and four detector stages to achieve a 550-MHz bandwidth and <-0.34-dB log error over a 27-dB dynamic range. It is able to process 13-ns pulses with 5.0-ns and 5.2-ns risetimes and fall times, respectively.<>
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	1958
Ending Page	1965
Page Count	8
File Size	1004001
File Format	PDF
ISSN	00189480
Volume Number	36
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide Heterojunction bipolar transistors Dynamic range Molecular beam epitaxial growth Bandwidth Bipolar integrated circuits Fabrication Chemical vapor deposition MOCVD Testing
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High-performance GaAs heterojunction bipolar transistor logarithmic IF amplifier

High performance sample-and-hold implemented with GaAs/AlGaAs heterojunction bipolar transistor technology

Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

Monolithic X-band heterojunction bipolar transistor power amplifiers

GaAs HBT PIN diode attenuators and switches

A GaAs HBT monolithic logarithmic IF (0.5 to 1.5 GHz) amplifier with 60 dB dynamic range and 400 mW power consumption

GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifier

A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors

GaAs HBT MMIC broadband amplifiers from DC to 20 GHz

High-performance GaAs heterojunction bipolar transistor monolithic logarithmic IF amplifiers

Similar Documents

High-performance GaAs heterojunction bipolar transistor logarithmic IF amplifier

High performance sample-and-hold implemented with GaAs/AlGaAs heterojunction bipolar transistor technology

Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

Monolithic X-band heterojunction bipolar transistor power amplifiers

GaAs HBT PIN diode attenuators and switches

A GaAs HBT monolithic logarithmic IF (0.5 to 1.5 GHz) amplifier with 60 dB dynamic range and 400 mW power consumption

GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifier

A broad-band amplifier using GaAs/GaAlAs heterojunction bipolar transistors

GaAs HBT MMIC broadband amplifiers from DC to 20 GHz

High-performance GaAs heterojunction bipolar transistor monolithic logarithmic IF amplifiers