NDLI: Effects of halo implant on hot carrier reliability of sub-quarter micron MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Das, A. De, H. Misra, V. Venkatesan, S. Veeraraghavan, S. Foisy, M.
Copyright Year	1998
Description	Author affiliation: Networking & Comput. Syst. Group, Motorola Inc., Austin, TX, USA (Das, A.)
Abstract	Halo implants with various tilt angles and energies were compared from the point of hot carrier reliability. Our study shows that a larger tilt or a deeper, more energetic halo implant leads to stronger reverse short channel effects and higher electric field in the extension/channel junction. However, the net impact of a sharper extension/channel junction on hot carrier degradation was found to be minimal, because the weaker halo devices have higher substrate current resulting from higher drain currents which counterbalances increased electric field in the extension-channel junction for the stronger halo devices. However, when devices from two lots with similar performance parametrics, such as similar threshold voltage (V/sub t/) roll-off, were compared, larger tilt/lower energy halo devices were found to have less degradation than lower tilt/higher energy halos.
Starting Page	189
Ending Page	193
File Size	463028
Page Count	5
File Format	PDF
ISBN	0780344006
DOI	10.1109/RELPHY.1998.670539
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-03-31
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Implants Hot carriers MOSFET circuits Boron Degradation CMOS technology P-n junctions Threshold voltage Computer networks Space technology
Content Type	Text
Resource Type	Article

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