NDLI: Electron drift velocities in In0.53Ga0.47As at very high electric fields

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Front cover and table of contents

Plenary session—Invited papers

The TI solar energy system development

Silicon molecular beam epitaxy as a VLSI processing technique

Non volatile semiconductor memories

Session 2 Integrated circuits — MOS Memory

Bit by bit erasable $E^{2}PROM$ with single transistor per bit

A high density floating-gate EEPROM cell

An EEPROM with PN junction in floating gate

A high performance silicon-on-sapphire electrically erasable PROM

Design for alpha immunity of MOS dynamic RAM's

A buried N-grid for protection against radiation induced charge collection in electronic circuits

A new sense amplifier technique for VLSI dynamic RAM's

Session 3 Device technology — Interconnects and contacts for VLSI

WOS: Low-resistance self-aligned source, drain and gate transistors

Composite TiSi2/n+ poly-Si low resistivity gate electrode and interconnect for VLSI device technology

A new integration technology that enables forming bonding pads on active areas

Aluminum thermomigration technology for 3-dimensional integrated circuits

Programming mechanism of polysilicon fuse links

A new failure mechanism in Schottky barrier diodes with Al-Cu-Si metallurgy

Session 4 Device technology — Advanced GaAs technology

Ti/W silicide gate technology for self-aligned GaAs MESFET VLSIS

Fabrication of GaAs MESFET's with non-alloyed ohmic contacts

Characteristics of very short gate normally-off GaAs MESFET inverters

A submicron gate-wall structure for low-noise MESFET's

An In0.53Ga0.47As very shallow junction gate structure grown by molecular beam epitaxy for field effect transistor applications

Effect of proton bombardment isolation on the DC and transient characteristics of Schottky barriers on AlxGa1-xAs

Session 5 Solid state devices — InP MIS structures and Josephson junctions

New considerations of 3-5 MOS and other device considerations

Insulator semiconductor interfaces on InP

Performance of InP IGFET's fabricated with a virtual self-aligned process

Nb Josephson tunnel junctions with thin layers of Al near the barrier

High gain, wide margin Josephson junction OR and AND gates

The punchthrough characteristics of Josephson logic circuits

Session 6 Quantum electronics and energy conversion devices — Photovoltaics

Solar cell production with unconventional, cast silicon

Status of emerging materials photovoltaic technologies

Dember effects in a-Si:H solar cells

SnO2/n-Si solar cell

Polka dot concentrator cell

Lifetime and effective surface recombination velocity measurements in high-efficiency Si solar cells

A metal interconnected cascade $(MIC^{2})$ solar cell

Session 7 Detectors, sensors and displays — Quantum detectors

Recent advances in Schottky IR photodiodes and projected camera capabilities

Sub-100 ps bulk-recombination-limited InP:Fe photoconductive detector

High performance $Be^{+}implanted$ InSb photodiodes

Three-dimensional numerical analysis of diffusion current and quantum efficiency of small area Hg1-xCdxTe photodiodes

Characterization of Hg1-xCdxTe for high performance device applications by optical modulation spectroscopy

Relation between performance of Hg1-xCdxTe infrared detectors and grain boundary angles of their material

Long wavelength charge injection devices on HgCdTe

Session 8 Electron tubes — Millimeter-wave gyrotrons

Gyro-device developments and applications

Development of a 200 kW, 60 GHz gyrotron

Test results of a 94 GHz, 10 kW gyrotron and a 60 GHz, 200 kW gyrotron

Performance of a 1-mm wavelength second-harmonic gyromonotron

Operation of gyromonotrons with low Q factors

Impedance definition and calculation for various traveling-wave gyrotron circuits and modes

A gyro-TWT with a space-charged limited gun

Session 9 Integrated circuits — Small geometry MOS models and limits

New IGFET short-channel threshold voltage model

Optimization of depletion-mode MOSFET's

A charge sheet model for small geometry MOSFET's

An analytic MOSFET model including internodal capacitances: Results on device scaling and parasitic limitations

A re-examination of practical scalability limits of n-channel and p-channel MOS devices for VLSI

A two-dimensional computer simulation of hot carrier effects in MOSFETs

Session 10 Device technology — New developments in material technology

Oxygen precipitation in silicon

Stress-enhanced mobility in MOSFETs fabricated in zone-melting-recrystallized poly-Si films

The use of thin epitaxial silicon layers for MOS VLSI

Low temperature photo-CVD oxide processing for semiconductor device applications

Influence of encapsulation films on the properties of Si/SiO2interface of MOS-structures when exposed to radiation

Session 11 Solid state devices — High voltage integrated circuits and bipolar devices

530V Integrated gated diode switch for telecommunications

High voltage integrated circuits for telecommunications

Process and device design of a 1000-volt MOS IC

Integrated high-voltage/Low-voltage MOS devices

The monolithic HV BIPMOS

A depletion stop double base phototransistor: A demonstration of a new transistor structure

Session 12 Quantum electronics and energy conversion devices — Integrated optoelectronics and detectors

Integrated optoelectronic structure

An integrated PIN/JFET photoreceiver for long wavelength optical systems

The reliability of 1.3 µm emitters and detectors for fiber optics

The superlattice photodetector: A new avalanche photodiode with a large ionization rates ratio

Determination of impact ionization coefficients in InP by analysis of photomultiplication and noise measurements

Trap-assisted tunneling in the reverse dark current of GaAlAsSb avalanche photodiodes

Session 13 Detectors, sensors, and displays — Displays and contact imagers

Plasma memory display with internal addressing

The characteristics and performance of an experimental AC plasma 960 × 768 line panel and electronics assembly

An improved positive contrast guest-host type display using nematic-cholesteric phase change

Evaporated polycrystalline-silicon thin-film transistors on glass

A 2048-element contact-type linear image sensor for facsimile

A contact-type linear sensor with a GD a-Si:H photodetector array

Session 14 Electron tubes — Millimeter wave devices and technology

The outer limits—Intense beam devices

Theory of eigenmode amplification

"Comb-Quad" millimeter-wave coupled-cavity TWT interaction structure

Peniotron oscillator operating performance

A triple pole piece magnetic field reversal element for generation of high rotational energy beams

Magnetically shielded electron guns with a center magnetic post

Multipactor electron gun for millimeter wave tubes

Session 15 Integrated circuits — MOS technology and structures

Scaleable retrograde p-well CMOS technology

350°C CMOS logic process

Design model for bulk CMOS scaling enabling accurate latch-up prediction

Floating substrate effects in SOS VLSIs

A novel buried drain DMOSFET structure

Schottky MOSFET for VLSI

Session 16 Device technology — Insulator technology

Direct moat isolation for VLSI

Full isolation technology by porous oxidized silicon and its application to LSIs

Double threshold MOSFETs in bird's-beak free structures

A new bird's-beak free field isolation technology for VLSI devices

High-field generation of electron traps and charge trapping in ultra-thin SiO2

New instability in thin gate Oxide MOST's

Electron trapping in very thin thermal silicon dioxides

Thermal Nitride capacitors for high density RAMs

Session 17 Solid state devices — High voltage power devices

Controlled thyristor turn-on for high DI/DT capability

Thyristors with overvoltage self-protection

A study on GTO turn-off failure mechanism

A large area power MOSFET designed for low conduction losses

Power MOS transistors for 1000 V blocking voltage

Low specific on-resistance 400V LDMOST

On-resistance characterization of VDMOS power transistors

Session 18 Quantum electronics and energy conversion devices — Lasers and LED's

Quantum well laser structure

Shallow proton stripe GaAlAs DH lasers grown by MO-CVD

Highly reliable and mode-stabilized (GaAl)As double-heterostructure visible lasers on p-GaAs substrate

High-power single-mode semiconductor diode lasers

High power optical fiber data transmission using CDH-LOC AlGaAs laser diodes

Auger recombination in In1-xGaxAsyP1-y

Laser generated (Al, Ga)As microstructures with high luminescence efficiency

Three terminals AlGaAs/GaAs heterostructure LED

Session 19 Detectors, sensors and displays — Silicon sensors and imaging arrays

Emerging technology in chemically-sensitive field effect transistor (CHEMFET) devices

An implantable ion sensor transducer

Accurate simulation of high-performance silicon pressure sensors

A novel solid-state image sensor for image recording at 2,000 frames per second

Solid-state color imager using an a-Si:H photoconductive film

A polysilicon isolated photodiode array imager

A CCD imaging device having a PLOSS structure

Session 20 Electron tubes — Microwave tubes, design, analysis and techniques

Analysis of the spent beam of a high-power TWT

Synthesis of a hollow-beam gun based on the Pierce design

Solitons and microwave crossed-field amplifier characteristics

A coupled-cavity TWT operating in the inverted slot mode

Session 21 Prospects for photovoltaics

Session 22 Silicon processing technology

Session 23 Integrated circuits — Bipolar IC technology

Perspective of scaled bipolar devices

Modeling of bipolar device structures - physical simulation

Limitations to the scaling of Schottky barrier diodes

1.25 Micron injection logic technology

E-beam fabrication of bipolar VLSI logic, including a ∼5K gate 16-bit $I^{2}L$ microprocessor

Session 24 Device technology — Advanced CMOS technology

Advanced Hi-CMOS device technology

Considerations for scaled CMOS source/drains

Lateral effect of oxidation enhanced diffusion in silicon

Experimental and theoretical results on fine-line p-channel MOSFETs

Hot carrier instability in submicron MoSi2gate MOS/SOS devices

Vertical single-gate CMOS inverters on laser-processed multilayer substrates

ST-CMOS (Stacked Transistors CMOS): A double-poly-NMOS-compatible CMOS technology

Session 25 Device technology — Process technology

An operational two level photoresist technology

Precision registration method for 0.5 µm electron beam lithography

Feature size limit analysis of lift-off metallization technology

Use of process and 2-D MOS simulation in the study of doping profile influence on S/D resistance in short channel MOSFET's

High rate anisotropic etching

A new Al plasma etching technology for fine metallization of highly packed LSI's

Novel bipolar process utilizing MeV energy ion implantation

Session 26 Solid state devices — Modeling and MOS devices

Three-dimensional simulation of VLSI MOSFET's: The three dimensional simulation program WATMOS

Physical mechanisms responsible for short channel effects in MOS devices

A unified model for hot-electron currents in MOSFET's

Electron trapping in SiO2—An injection mode dependent phenomenon

Modeling of high-speed, large-signal transistor switching transients from s-parameter measurements

Evaluation of the permeable base transistor for application in silicon integrated logic circuits

Radiation-hard 16K CMOS/SOS clocked static RAM

Session 27 Solid state devices — III-V devices

GaAs charge coupled devices for high speed signal processing applications

Observation of two-dimensional charge transfer in GaAs

(Ga,Al)As/GaAs bipolar transistors for digital integrated circuits

Spatial and temporal constraints on transport in submicron gallium arsenide devices

In0.53Ga0.47As/Si3N4n-channel and p-channel inversion mode MISFET's

Electron drift velocities in In0.53Ga0.47As at very high electric fields

Session 28 Device technology — VLSI MOS technology

VLSI Technologies—A future perspective

An optimally designed process for submicron MOSFETs

Elimination of hot electron gate current by the lightly doped drain-source structure

An Mo gate 4 K static RAM fabricated using a novel direct contact technology

Characterization of MoSi2-gate buried channel MOSFET's for a 256K-bit dynamic RAM

1µm 256K RAM process technology using molybdenum-polysilicon gate

Leakage current in high density CCD memory structures

Session 29 Solid state devices — GaAs transistors and diodes

High efficiency high power X-band GaAs FETs

A novel Via Hole P.H.S. structure in K-band power GaAs FET

Q-band (26-40 GHz) GaAs FETs

Microwave structuring of MESFET electrodes for increased power and efficiency

GaAs beam lead antiparallel diodes for mm wave subharmonic mixers

High performance GaAs beam-lead mixer diodes for millimeter and submillimeter applications

All-refractory Josephson logic circuits

"64 × 128-Element high-performance PtSi IR-CCD imager sensor"

A new liquid crystal display device based on thermally addressed pleochroic dye switching

An EAROM cell with a stacked gate and a single diffused layer

Sealed-interface local oxidation technology

Multiple octave traveling wave tubes

A vertically isolated self-aligned transistor

Reduction of interface state density in MNOS capacitors by Hydrogen implantation

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Electron drift velocities in In0.53Ga0.47As at very high electric fields

Content Provider	IEEE Xplore Digital Library
Author	Windhorn, T.H. Cook, L.W. Stillman, G.E.
Copyright Year	1981
Description	Author affiliation: University of Illinois at Urbana-Champaign, Urbana, Illinois (Windhorn, T.H.)
Abstract	Electron drift velocities in GaAs and in In0.53Ga0.47As have been experimentally determined using a microwave time-of-flight technique. Drift velocities in GaAs have been measured at temperatures from 95 K to 385 K for electric field strengths in excess of 160 kV/cm at most temperatures and as high as 236 kV/cm at 300 K. Measurements of electron drift velocities at various temperatures in In0.53Ga0.47As for field strengths of up to 150 kV/cm show a larger negative differential mobility, higher peak to valley ratio, and lower saturation velocity than is obtained with GaAs.
Starting Page	641
Ending Page	644
File Size	292424
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1981.190167
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electron mobility Gallium arsenide Substrates Velocity measurement Indium phosphide Electric variables measurement Epitaxial layers Laboratories Schottky barriers Schottky diodes
Content Type	Text
Resource Type	Article

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