NDLI: High rate anisotropic etching

Content Provider	IEEE Xplore Digital Library
Author	Bruce, R.H. Malafsky, G.P. Reinberg, A.R. Yao, W.W.
Copyright Year	1981
Description	Author affiliation: The Perkin-Elmer Corporation (Bruce, R.H.)
Abstract	High etch rate dry processes for several important materials including Si, SiO2, and Al have been developed using high pressure (> 100 Pa) processing. Etch rates can be made considerably faster than low pressure processes which are often reactant limited. The anisotropy is controlled by ion bombardment which will be shown to perform two roles: enchancement of the process or clearing of a passivant. A simple model of the potential distribution in the discharge will be discussed to aid in understanding the roles of excitation frequency and r.f. power in these processes. As device dimensions become smaller and wafer sizes larger, the need to precisely transfer resist patterns into underlying layers, uniformly and with individual wafer control are self evident. The need to do so in a cost effective way, has provided the pressure to develop high speed etching processes that make one at a time wafer handling a useful production technique. It is fortunate that the two requirements, high speed and anisotropy are mutually compatable and can be shown to have a positive corellation. In the past, considerable importance has been attached to the long mean free paths that exist at low pressures. Long paths are important for sputtering, to increase bombardment energy and reduce back scattering. However, if there are chemical reactions that produce stable, high vapor pressure products, high pressures can actually increase the rate of reaction, due to greater availability of reactant. That this can happen without a loss of dimensional control has not been generally appreciated.
Starting Page	578
Ending Page	581
File Size	618875
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1981.190150
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Anisotropic magnetoresistance Dry etching Semiconductor device modeling Frequency Resists Size control Costs Production Sputtering Scattering
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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