NDLI: Dember effects in a-Si:H solar cells

Content Provider	IEEE Xplore Digital Library
Author	Min-Koo Han Anderson, W.A.
Copyright Year	1981
Description	Author affiliation: State University of New York at Buffalo, Amherst, New York (Min-Koo Han)
Abstract	The origin of the open circuit voltage (Voc) difference between N-I-P and P-I-N a-Si solar cells is discussed herein. Vocof N-I-P a-Si:H solar cells is larger than that of P-I-N a-Si:H cells by more than 100 mV, while other photovoltaic data such as FF and Jscare almost identical. Since the undoped (I)-layer is the active region and thermal equilbrium carrier concentration in the active region is very low (less than $10^{10}cm^{-3}),$ the large difference in electron and hole mobility values (b = \micro_{n}/\micro_{p}\simeq100) causes a Dember field. This Dember field in the undoped region is always positive (directed away from the junction) in both N-I-P and P-I-N cells. The Dember field aids carrier collection in N-I-P cells but opposes carrier collection in P-I-N cells. Photogenerated current at high forward bias may be influenced by this Dember field which can explain the Vocdifference in N-I-P and P-I-N cells.
Starting Page	134
Ending Page	137
File Size	266114
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1981.190020
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells PIN photodiodes Photovoltaic systems Solar power generation Substrates Doping Optical films Optical losses Steel Ohmic contacts
Content Type	Text
Resource Type	Article

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