NDLI: Relation between performance of Hg1-xCdxTe infrared detectors and grain boundary angles of their material

Content Provider	IEEE Xplore Digital Library
Author	Takigawa, H. Akamatsu, T. Kanno, T. Tsunoda, R.
Copyright Year	1981
Description	Author affiliation: Fujitsu Laboratories Ltd., Hyogo-ku, Kobe, Japan (Takigawa, H.)
Abstract	The purpose of this work is to clarify the relation between the performance of HgCdTe infrared detectors and the grain boundary angles of their material. Two type of devices are studied; MIS diode and photoconductive devices. The grain boundary angles are measured by the X-ray diffraction method and the experimental results on the fabricated devices at 77K are summarized. It has been found that small-grain boundary below 0.05° has little effect for the MIS diode with a peak wavelength of 5µm and the grain boundary above 0.1° decreases a storage time and a maximum surface potential of the MIS diode. In addition, it has been confirmed that the small-angle grain boundary below 0.1° does not act as the recombination centers and noise sources of photoconductive detector with a peak wavelength of 12µm.
Starting Page	172
Ending Page	175
File Size	826178
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1981.190031
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Mercury (metals) Grain boundaries Diodes Infrared detectors Photoconducting materials Photoconducting devices Wavelength measurement Goniometers X-ray diffraction Surface waves
Content Type	Text
Resource Type	Article

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