NDLI: Three-dimensional numerical analysis of diffusion current and quantum efficiency of small area Hg1-xCdxTe photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Briggs, R.J.
Copyright Year	1981
Description	Author affiliation: Honeywell Electro-Optics Operations, Lexington, Massachusetts (Briggs, R.J.)
Abstract	Numerical techniques were used to solve the 3-dimensional diffusion equation for planar circular $n^{+}on$ p Hg1-xCdxTe photodiodes of radius "a". This is the first time that both the lateral contributions to the p-side diffusion current (limiting zero bias impedance Ro) and the photoresponse have been calculated for small area photodiodes. Our analysis reveals the saturation current ISATis conspicuously independent of both lifetime τeand diffusion length Lefor diode dimensions small compared with diffusion length, whereas for larger diode dimensions we findI_{SAT} \infin a^{2}/L_{e}. Hence no additional reduction in ISATnor increase in Rooccurs for improvement in Lebeyond about 4a for all p-side thicknesses. The lateral contributions to photocurrent for front side diode illumination were used to determine the performance tradeoffs from choice of photodiode junction area for fixed optical area.
Starting Page	165
Ending Page	168
File Size	240326
Page Count	4
File Format	PDF
DOI	10.1109/IEDM.1981.190029
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1981-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Numerical analysis Mercury (metals) Photodiodes Diodes Equations Tellurium Current limiters Impedance Photoconductivity Lighting
Content Type	Text
Resource Type	Article

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